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T2G4003532-FL_15

Description
30W, 32V DC 3.5 GHz, GaN RF Power Transistor
File Size986KB,13 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
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T2G4003532-FL_15 Overview

30W, 32V DC 3.5 GHz, GaN RF Power Transistor

T2G4003532-FL
30W, 32V DC – 3.5 GHz, GaN RF Power Transistor
Applications
Military radar
Civilian radar
Professional and military radio communications
Test instrumentation
Wideband or narrowband amplifiers
Jammers
Product Features
Frequency: DC to 3.5 GHz
Output Power (P
3dB
): 28 W at 3.5 GHz
Linear Gain: >16 dB at 3.5 GHz
Operating Voltage: 32 V
Low thermal resistance package
Functional Block Diagram
General Description
The TriQuint T2G4003532-FL is a 30 W (P
3dB
) discrete
GaN on SiC HEMT which operates from DC to 3.5 GHz.
The device is constructed with TriQuint’s proven
TQGaN25 process, which features advanced field plate
techniques to optimize power and efficiency at high drain
bias operating conditions. This optimization can
potentially lower system costs in terms of fewer amplifier
line-ups and lower thermal management costs.
Lead-free and ROHS compliant
Evaluation boards are available upon request.
Pin Configuration
Pin No.
1
2
Flange
Label
V
D
/ RF OUT
V
G
/ RF IN
Source
Ordering Information
Part
T2G4003532-FL
T2G4003532-
FS/FL-EVB1
ECCN
EAR99
EAR99
Description
Packaged part
Flangeless
2.7-3.5 GHz
Evaluation Board
Datasheet: Rev - 12-30-13
© 2013 TriQuint
- 1 of 13 -
Disclaimer: Subject to change without notice
www.triquint.com

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Description 30W, 32V DC 3.5 GHz, GaN RF Power Transistor 30W, 32V DC 3.5 GHz, GaN RF Power Transistor 30W, 32V DC 3.5 GHz, GaN RF Power Transistor 30W, 32V DC 3.5 GHz, GaN RF Power Transistor
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