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AH1-1G_15

Description
250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
CategoryTopical application    Wireless rf/communication   
File Size671KB,5 Pages
ManufacturerTriQuint Semiconductor Inc. (Qorvo)
Websitehttp://www.triquint.com
Download Datasheet Parametric Compare View All

AH1-1G_15 Overview

250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER

AH1-1G_15 Parametric

Parameter NameAttribute value
Maximum operating temperature85 Cel
Minimum operating temperature-40 Cel
Maximum input power10 dBm
Maximum operating frequency3000 MHz
Minimum operating frequency250 MHz
Processing package descriptionGREEN, TO-243C, SOT-89, 3 PIN
Lead-freeYes
EU RoHS regulationsYes
stateTRANSFERRED
structureCOMPONENT
terminal coatingNICKEL PALLADIUM GOLD
Impedance characteristics50 ohm
Microwave RF TypeWIDE BAND MEDIUM POWER
AH1-1
High Dynamic Range Amplifier
Product Features
250 – 4000 MHz
+41 dBm OIP3
3 dB Noise Figure
13.5 dB Gain
+21 dBm P1dB
Lead-free/Green/
RoHS-compliant
SOT-89 Package
Single +5 V Supply
MTTF > 100 years
Product Description
The AH1-1 is a high dynamic range amplifier in a low-
cost surface-mount package. The combination of low
noise figure and high output IP3 at the same bias point
makes it ideal for receiver and transmitter applications.
The AH1-1 is a specially screened version of the AH1
offering a very narrow gain spread from device to device.
The device combines dependable performance with
superb quality to maintain MTTF values exceeding 100
years at mounting temperatures of +85C. The AH1-1 is
available in both the standard SOT-89 package and the
environmentally-friendly
lead-free/green/RoHS-
compliant SOT-89 package.
The broadband amplifier uses a high reliability GaAs
MMIC technology and is targeted for applications where
high linearity is required. It is well suited for various
current and next generation wireless technologies such as
GPRS, GSM, CDMA, and W-CDMA. In addition, the
AH1-1 will work for other applications within the 250 to
4000 MHz frequency range such as fixed wireless.
Functional Diagram
GND
4
1
RF IN
2
GND
3
RF OUT
Applications
Mobile Infrastructure
CATV / DBS
W-LAN / Wi-Bro / WiMAX
RFID
Defense / Homeland Security
Fixed Wireless
Function
Input
Output / Bias
Ground
Pin No.
1
3
2, 4
Specifications
(1)
Parameter
Operational Bandwidth
Test Frequency
Gain
Input Return Loss
Output Return Loss
Output P1dB
Output IP3
(2)
Noise Figure
(3)
Operating Current Range
Supply Voltage
Typical Performance
(4)
Units
MHz
MHz
dB
dB
dB
dBm
dBm
dB
mA
V
Min
250
12.9
Typ
800
13.3
8
15
+21.7
+41
3
150
5
Max
4000
13.8
Parameter
Frequency
S21
S11
S22
Output P1dB
Output IP3
(2)
IS-95 Channel Power
(5)
Noise Figure
Supply Voltage
Device Current
Units
MHz
dB
dB
dB
dBm
dBm
dB
dB
V
mA
900
14.2
-21
-14
+21.7
+42
+15.5
3.2
Typical
1900
12.2
-14
-13
+22
+41
+16.5
3.3
5
150
2140
12.0
-21
-11
+22
+40
3.3
+37
120
180
1. Test conditions unless otherwise noted: T = 25 ºC, 50
system.
2. OIP3 measured with two tones at an output power of +5 dBm/tone separated by 10 MHz. The
suppression on the largest IM3 product is used to calculate the 3OIP using a 2:1 rule.
3. Noise figure can be optimized by matching the input for optimal return loss.
4. Parameters reflect performance in an AH1-PCB application circuit, as shown on page 3.
5. Measured with -45 dBc ACPR, IS-95 9 channels fwd.
Not Recommended for
New Designs
Recommended Replacement
Part: TQP3M9007
Ordering Information
Part No.
AH1-1G
Absolute Maximum Rating
Parameter
Operating Case Temperature
Storage Temperature
Supply Voltage
RF Input Power (continuous)
Junction Temperature
Thermal Resistance, Rth
Junction Temperature for >10
6
hours MTTF
Operation of this device above any of these parameters may cause permanent
damage.
Specifications and information are subject to change without notice
Rating
-40 to +85
C
-55 to +150
C
+6 V
+10 dBm
+160
C
59 C / W
Description
High Dynamic Range Amplifier
(lead-free/green/RoHS-compliant SOT-89 Pkg)
Standard T/R size = 1000 pieces on a 7” reel.
TriQuint Semiconductor, Inc
Phone +1-503-615-9000
FAX: +1-503-615-8900
e-mail: info-sales@tqs.com
Web site: www.TriQuint.com
Page 1 of 5
May 2012

AH1-1G_15 Related Products

AH1-1G_15 AH1-1G
Description 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER 250 MHz - 3000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
Maximum operating temperature 85 Cel 85 Cel
Minimum operating temperature -40 Cel -40 Cel
Maximum input power 10 dBm 10 dBm
Maximum operating frequency 3000 MHz 3000 MHz
Minimum operating frequency 250 MHz 250 MHz
Processing package description GREEN, TO-243C, SOT-89, 3 PIN GREEN, TO-243C, SOT-89, 3 PIN
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state TRANSFERRED TRANSFERRED
structure COMPONENT COMPONENT
terminal coating NICKEL PALLADIUM GOLD NICKEL PALLADIUM GOLD
Impedance characteristics 50 ohm 50 ohm
Microwave RF Type WIDE BAND MEDIUM POWER WIDE BAND MEDIUM POWER
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