Preliminary
Datasheet
RJH60F6BDPQ-A0
600V - 45A - IGBT
High Speed Power Switching
Features
Low collector to emitter saturation voltage
V
CE(sat)
= 1.35 V typ. (at I
C
= 45 A, V
GE
= 15 V, Ta = 25°C)
Built in fast recovery diode in one package
Trench gate and thin wafer technology
High speed switching
t
f
= 74 ns typ. (at I
C
= 30 A, V
CE
= 400 V, V
GE
= 15 V, Rg = 5
,
Ta = 25°C, inductive load)
R07DS0632EJ0100
Rev.1.00
Feb 17, 2012
Outline
RENESAS Package code: PRSS0003ZH-A
(Package name: TO-247A)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Tc = 25°C)
Item
Collector to emitter voltage
Gate to emitter voltage
Collector current
Tc = 25 °C
Tc = 100 °C
Collector peak current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal impedance (IGBT)
Junction to case thermal impedance (Diode)
Junction temperature
Storage temperature
Notes: 1. Pulse width limited by safe operating area.
2. PW
5
s,
duty cycle
1%
Symbol
V
CES
V
GES
I
C
I
C
ic(peak)
Note1
i
DF
(peak)
Note2
P
C
j-c
j-cd
Tj
Tstg
Ratings
600
±30
85
45
170
100
297.6
0.42
1.1
150
–55 to +150
Unit
V
V
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 1 of 8
RJH60F6BDPQ-A0
Preliminary
Electrical Characteristics
(Tj = 25°C)
Item
Zero gate voltage collector current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Switching time
Symbol
I
CES
I
GES
V
GE(off)
V
CE(sat)
Cies
Coes
Cres
t
d(on)
t
r
t
d(off)
t
f
V
ECF
t
rr
Min
4
Typ
1.35
3800
150
65
58
80
131
74
2.5
25
Max
100
±1
8
1.75
3.0
Unit
A
A
V
V
pF
pF
pF
ns
ns
ns
ns
V
ns
Test Conditions
V
CE
= 600 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 45 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0 V
f = 1 MHz
I
C
= 30 A,
V
CE
= 400 V, V
GE
= 15 V
Rg = 5
Note3
,
Inductive load
I
F
= 30 A
Note3
C-E diode forward voltage
C-E diode reverse recovery time
Notes: 3. Pulse test
I
F
= 30 A
di
F
/dt = 100 A/s
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 2 of 8
RJH60F6BDPQ-A0
Preliminary
Main Characteristics
Maximum Safe Operation Area
1000
Typical Output Characteristics
Ta = 25
°
C
160 Pulse Test
10 V
11 V
15 V
9.6 V
9.8 V
9.4 V
9.2 V
9V
8.8 V
8.6 V
40
8.4 V
8.2 V
V
GE
= 8 V
0
1
2
3
4
5
Collector Current I
C
(A)
100
PW
10
=1
Collector Current I
C
(A)
1000
μ
s
120
10
80
00
μ
s
1
Tc = 25°C
Single pulse
0.1
1
0
10
100
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Transfer Characteristics
180
Collector to Emitter Saturation Voltage
vs. Gate to Emitter Voltage (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
3.0
Ta = 25
°
C
Pulse Test
Collector Current I
C
(A)
160
140
120
100
80
60
40
20
0
0
Pulse TestV
V
CE
= 10
Ta = 25
°
C
Pulse Test
2.6
2.2
I
C
= 30 A
45 A
85 A
Tc = 75°C
25°C
–25°C
1.8
1.4
1.0
6
8
10
12
14
16
18
20
2
4
6
8
10
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Junction Temparature (Typical)
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
2.0
V
GE
= 15 V
Pulse Test
I
C
= 85 A
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Junction Temparature (Typical)
8
1.8
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
7
I
C
= 10 mA
6
1.6
45 A
1.4
30 A
1.2
15 A
5
V
CE
= 10 V
Pulse Test
4
−25
0
25
1 mA
1.0
−25
0
25
50
75
100 125 150
50
75
100 125 150
Junction Temparature Tj (
°
C)
Junction Temparature Tj (
°
C)
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 3 of 8
RJH60F6BDPQ-A0
Preliminary
Typical Capacitance vs.
Collector to Emitter Voltage
10000
Cies
Forward Current vs. Forward Voltage (Typical)
100
V
GE
= 0 V
Ta = 25
°
C
Pulse Test
Forward Current I
F
(A)
Capacitance C (pF)
80
1000
60
100
Coes
40
20
0
0
1
2
3
4
5
10
V
GE
= 0 V
f = 1 MHz
Ta = 25
°
C
0
50
100
150
200
Cres
1
250
300
C-E Diode Forward Voltage V
CEF
(V)
Collector to Emitter Voltage V
CE
(V)
Dynamic Input Characteristics (Typical)
Collector to Emitter Voltage V
CE
(V)
I
C
= 25 A
Ta = 25
°
C
V
CC
= 600 V
300 V
600
V
CE
12
400
8
200
V
CC
= 600 V
300 V
0
0
40
80
120
4
0
160
Gate Charge Qg (nc)
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Gate to Emitter Voltage V
GE
(V)
800
V
GE
16
Page 4 of 8
RJH60F6BDPQ-A0
Switching Characteristics (Typical) (1)
1000
Preliminary
Switching Characteristics (Typical) (2)
10000
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 150
°
C
V
CC
= 400 V, V
GE
= 15 V
Rg = 5
Ω,
Tj = 25
°
C
1000
tf
100
td(off)
td(on)
tr
tr includes the diode recovery
10
1
10
100
Eoff
100
Eon
10
1
Eon includes the diode recovery
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
1000
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10000
100
td(off)
tf
tr
td(on)
Swithing Energy Losses E (μJ)
Switching Time t (ns)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Ta = 150
°
C
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Ta = 150
°
C
Eoff
1000
Eon
10
1
tr includes the diode recovery
10
100
100
1
Eon includes the diode recovery
10
100
Gate Resistance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (5)
1000
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10000
td(off)
100
tf
td(on)
tr
Swithing Energy Losses E (μJ)
Switching Times t (ns)
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
V
CC
= 400 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
Eon
1000
Eoff
10
25
tr includes the diode recovery
50
75
100
125
150
Eon includes the diode recovery
100
25
50
75
100
125
150
Junction Temperature Tj (°C)
(Inductive load)
Junction Temperature Tj (°C)
(Inductive load)
R07DS0632EJ0100 Rev.1.00
Feb 17, 2012
Page 5 of 8
京公网安备 11010802033920号
EEWORLD
