SMG2302N
Elektronische Bauelemente
3.4 A, 20 V, R
DS(ON)
76 m
N-Channel Enhancement Mode MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount MOSFETs utilize a High
Cell Density trench process to provide Low R
DS(on)
and to
ensure minimal power loss and heat dissipation. Typical
applications are
A
3
SC-59
L
3
Top View
C B
1
2
2
FEATURES
1
Low R
DS(on)
provides higher efficiency and extends
battery life.
Low thermal impedance copper lead frame SC-59
saves board space.
Fast switching speed.
High performance trench technology.
K
E
D
F
G
H
J
Application
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise noted)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Operating Junction and Storage Temperature Range
P
D
@ T
A
=25°C
P
D
@ T
A
=70°C
I
D
@ T
A
=25°C
I
D
@ T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
Tj, Tstg
Ratings
20
±8
3.4
2.2
10
1.6
1.25
0.8
-55 ~ 150
Unit
V
V
A
A
A
A
W
W
°C
Thermal Resistance Ratings
Maximum Junction to Ambient
1
Notes:
1 Surface Mounted on 1” x 1” FR4 Board.
2 Pulse width limited by maximum junction temperature.
t
≦
5 sec
Steady State
R
JA
100
166
°C
/ W
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Feb-2011 Rev. A
Page 1 of 4
SMG2302N
Elektronische Bauelemente
3.4 A, 20 V, R
DS(ON)
76 m
N-Channel Enhancement Mode MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(on)
R
DS(ON)
g
fs
V
SD
Min.
0.7
-
-
-
7
-
-
-
-
Typ.
0.8
-
-
-
-
-
-
7
0.7
Max.
1.2
100
1
10
-
76
103
-
-
Unit
V
nA
μA
A
mΩ
S
V
Test Conditions
V
DS
=V
GS
, I
D
=250μA
V
DS
=0, V
GS
=8V
V
DS
=16V, V
GS
=0
V
DS
=20V, V
GS
= 0, T
J
= 55°C
V
DS
=5V, V
GS
=4.5V
V
GS
=4.5V, I
D
=3.4A
V
GS
=2.5V, I
D
=2.9A
V
DS
=5V, I
D
=1.5A
I
S
=1.6A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
C
iss
C
oss
C
rss
T
d(on)
T
r
T
d(off)
T
f
-
-
-
-
-
-
-
-
-
-
3.5
0.55
0.95
815
175
106
5
8
11
3
-
-
-
-
-
-
-
-
-
-
nS
V
DD
=10V, V
GEN
=4.5V,
R
L
=6, R
G
=6
pF
V
DS
=15V, V
GS
=0,
f=1MHz
nC
V
DS
=10V, V
GS
=4.5V,
I
D
=3.4A
Notes:
1 Pulse test：PW
≦
300 us duty cycle
≦
2%.
2 Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Feb-2011 Rev. A
Page 2 of 4
SMG2302N
Elektronische Bauelemente
3.4 A, 20 V, R
DS(ON)
76 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Feb-2011 Rev. A
Page 3 of 4
SMG2302N
Elektronische Bauelemente
3.4 A, 20 V, R
DS(ON)
76 m
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
11-Feb-2011 Rev. A
Page 4 of 4
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