SMG2327P
Elektronische Bauelemente
-3.6 A, -20 V, R
DS(ON)
52 m
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The miniature surface mount MOSFETs utilize high
cell density process.Low R
DS(on)
assures minimal power
loss and conserves energy, making this device ideal for
use in power management circuitry.
1
SC-59
A
3
3
L
Top View
2
C B
1
2
FEATURES
K
E
D
Low R
DS(on)
provides higher efficiency and extends
battery life.
Miniature SC-59 surface mount package saves
board space.
Fast switching speed.
High performance trench technology.
F
G
H
J
REF.
A
B
C
D
E
F
APPLICATION
DC-DC converters, power management in
portable and battery-powered products such as
computers, printers, PCMCIA cards, cellular and
cordless telephones.
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
T
A
=25°C
T
A
=70°C
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
I
S
P
D
T
J
, T
STG
Ratings
-20
±8
-3.6
-1.8
-10
±0.46
1.25
0.8
-55 ~ 150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Ratings
Maximum Junction to Ambient
1
t≦5 sec
Steady-State
R
θJA
100
150
°C/W
Notes
1
Surface Mounted on 1” x 1” FR4 Board.
2
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Aug-2012 Rev. B
Page 1 of 4
SMG2327P
Elektronische Bauelemente
-3.6 A, -20 V, R
DS(ON)
52 m
P-Channel Enhancement MOSFET
ELECTRICAL CHARACTERISTICS
(T
A
=25°C unless otherwise specified)
Parameter
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Current
1
Drain-Source On-Resistance
1
Forward Transconductance
1
Diode Forward Voltage
Symbol
V
GS(th)
I
GSS
I
DSS
I
D(ON)
Min.
Static
-0.7
-
-
-
-10
-
Typ.
-
-
-
-
-
-
-
-
12
-0.60
Max.
-
±100
-1
-10
-
0.052
0.072
0.120
-
-
Unit
V
nA
μA
A
Test Conditions
V
DS
= V
GS
, I
D
= -250μA
V
DS
=0, V
GS
= ±8V
V
DS
= -16V, V
GS
=0
V
DS
= -16V, V
GS
=0, T
J
=55°C
V
DS
= -5V, V
GS
= -4.5V
V
GS
= -4.5V, I
D
= -3.6A
R
DS(ON)
-
-
Ω
V
GS
= -2.5V, I
D
= -3.1A
V
GS
= -1.8V, I
D
= -2.7A
g
FS
V
SD
-
-
S
V
V
DS
= -5V,
,
I
D
= -1.25A
I
S
= -0.46A, V
GS
=0
Dynamic
2
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Q
g
Q
gs
Q
gd
C
ISS
C
OSS
C
RSS
Td
(ON)
T
r
Td
(OFF)
T
f
-
-
-
-
-
-
-
-
-
-
12
2
2
1312
130
106
6.5
20
31
21
-
-
-
-
-
-
-
-
-
-
nS
pF
nC
I
D
= -2.4A
V
DS
= -5V
V
GS
= -4.5V
V
DS
=-15V,
V
GS
=0V,
f=1MHz
V
DD
= -10V
V
GEN
= -4.5V
R
G
= 6Ω
I
L
= -1A
Notes
1
Pulse test：PW
≦
300 us duty cycle
≦
2%.
2
Guaranteed by design, not subject to production testing.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Aug-2012 Rev. B
Page 2 of 4
SMG2327P
Elektronische Bauelemente
-3.6 A, -20 V, R
DS(ON)
52 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Aug-2012 Rev. B
Page 3 of 4
SMG2327P
Elektronische Bauelemente
-3.6 A, -20 V, R
DS(ON)
52 m
P-Channel Enhancement MOSFET
CHARACTERISTIC CURVE
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
01-Aug-2012 Rev. B
Page 4 of 4
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