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SMG2371P_15

Description
P-Channel Enhancement MOSFET
File Size818KB,4 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
Download Datasheet View All

SMG2371P_15 Overview

P-Channel Enhancement MOSFET

SMG2371P
Elektronische Bauelemente
-1A, -100V, R
DS(ON)
1.2
P-Channel Enhancement MOSFET
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
SC-59
A
3
3
Low R
DS(on)
trench technology.
Low thermal impedance.
Fast switching speed.
1
L
Top View
2
C B
1
2
K
E
D
APPLICATIONS
PoE Power Sourcing Equipment
PoE Powered Devices
Telecom DC/DC converters.
White LED boost converters.
F
G
H
J
REF.
A
B
C
D
E
F
PACKAGE INFORMATION
Package
SC-59
MPQ
3K
LeaderSize
7’ inch
Millimeter
Min.
Max.
2.70
3.10
2.25
3.00
1.30
1.70
1.00
1.40
1.70
2.30
0.35
0.50
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.10 REF.
0.40 REF.
0.10
0.20
0.45
0.55
0.85
1.15
1
3
2
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Pulsed Drain Current
2
Continuous Source Current (Diode Conduction)
1
Power Dissipation
1
Symbol
V
DS
V
GS
T
A
=25°C
T
A
=70°C
I
D
I
DM
I
S
T
A
=25°C
T
A
=70°C
P
D
T
J
, T
STG
Ratings
-100
±20
-1
-0.8
-10
-1.6
1.3
0.8
-55 ~ 150
Unit
V
V
A
A
A
W
°C
Operating Junction and Storage Temperature Range
Thermal Resistance Data
Maximum Junction to Ambient
1
t≦10 sec
Steady-State
R
θJA
100
166
°C/W
Notes:
1.
Surface Mounted on 1” x 1” FR4 Board.
2.
Pulse width limited by maximum junction temperature.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
15-Mar-2011 Rev. A
Page 1 of 4
Appendix A - Instrumentation Amplifier Specifications
Appendix A - Instrumentation Amplifier Specifications...
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