5SMY86M1280 datasheet, PDF - EEWORLD Datasheet

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5SMY86M1280: DescriptionInsulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, 13.50 X 13.50 MM, DIE-1; CategoryDiscrete semiconductor The transistor; File Size184KB，6 Pages; ManufacturerABB; Websitehttp://www.abb.com/

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5SMY86M1280 Overview

Insulated Gate Bipolar Transistor, 150A I(C), 1200V V(BR)CES, N-Channel, 13.50 X 13.50 MM, DIE-1

5SMY86M1280 Parametric

Parameter Name	Attribute value
Maker	ABB
Parts packaging code	DIE
package instruction	UNCASED CHIP, S-XUUC-N1
Contacts	1
Reach Compliance Code	compliant
Maximum collector current (IC)	150 A
Collector-emitter maximum voltage	1200 V
Configuration	SINGLE
JESD-30 code	S-XUUC-N1
Number of components	1
Number of terminals	1
Package body material	UNSPECIFIED
Package shape	SQUARE
Package form	UNCASED CHIP
Polarity/channel type	N-CHANNEL
surface mount	YES
Terminal form	NO LEAD
Terminal location	UPPER
transistor applications	POWER CONTROL
Transistor component materials	SILICON

5SMY86M1280 Preview

1200 V

150 A

IGBT-Die

5SMY 12M1280

Die size: 13.5 x 13.5 mm

Doc. No. 5SYA 1322-03 04 14



Ultra low loss thin IGBT die

Highly rugged SPT

design

Large bondable emitter area

Passivation : Silicon Nitride plus Polyimide

Maximum rated values

Parameter

Collector-emitter voltage

DC collector current

Peak collector current

Gate-emitter voltage

IGBT short circuit SOA

Junction temperature

Symbol Conditions

CES

GES

psc

vj(op)

= 900 V, V

CEM



1200 V



15 V, T



125 °C

Limited by T

vjmax

= 0 V, T



25 °C

min

max

1200

150

300

Unit

µs

°C

-20

175

-40

150

Maximum rated values indicate limits beyond which damage to the device may occur per IEC 60747 - 9

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

5SMY 12M1280

IGBT characteristic values

Parameter

Collector (-emitter)

breakdown voltage

Collector-emitter

saturation voltage

Collector cut-off current

Gate leakage current

Gate-emitter threshold voltage

Gate charge

Input capacitance

Output capacitance

Reverse transfer capacitance

Internal gate resistance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Symbol Conditions

(BR)CES

CE sat

CES

GES

GE(TO)

ies

oes

res

Gint

d(on)

d(off)

= 600 V, I

= 150 A,

= 6.8

,

15



= 60 nH,

inductive load

= 600 V, I

= 150 A,

= 6.8

,

15



= 60 nH,

inductive load

= 600 V, I

= 150 A,

= ±15 V, R

= 6.8

,



= 60 nH,

inductive load,

FWD: 5SLY 12M1200

= 600 V, I

= 150 A,

= ±15 V, R

= 6.8

,



= 60 nH,

inductive load

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 125 °C

= 25 °C

= 25 V, V

= 0 V, f = 1 MHz,

= 25 °C

= 0 V, I

= 1 mA, T

= 25 °C

= 150 A, V

= 15 V

= 1200 V, V

= 0 V

= 25 °C

= 125 °C

= 25 °C

= 125 °C

min

1200

typ

max

Unit

2.0

2.2

100

150

-200

1530

10.6

0.71

0.47

200

230

460

525

200

µA



= 0 V, V

20

V, T

= 125 °C

= 6 mA, V

= V

, T

= 25 °C

= 150 A, V

= 600 V, V

= -15 ..15 V

Turn-on switching energy

= 125 °C

= 25 °C

= 125 °C

9.4

650

Turn-off switching energy

off

Short circuit current

psc

≤ 10 μs, V

= 15 V, T

= 125 °C,

= 900 V, V

CEM

≤ 1200 V

Characteristic values according to IEC 60747 - 9

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1322-03 04 14

page 2 of 6

5SMY 12M1280

Mechanical properties

Parameter

Overall die L x W

Dimensions

exposed

L x W (except gate pad)

front metal

gate pad

thickness

Metallization

Unit

13.5 x 13.5

12.0 x 12.0

1.39 x 1.39

140 ± 20

AlSi1

Al / Ti / Ni / Ag

1.2

µm

LxW

front (E)

back (C)

For assembly instructions refer to : IGBT and Diode chips from ABB Switzerland Ltd, Semiconductors, Doc. No. 5SYA 2033.

Form of delivery

Description

Unsawn 6" wafer die

Sawn 6" wafer die (on blue tape)

Part number

5SMY 76M1280

5SMY 86M1280

Outline drawing

1.39

±0.05

1.57

0.23

11.96

13.47

±0.05

1.39

±0.05

1.58

Emitter

11.97

13.49

±0.05

Note: all dimensions are shown in mm

This is an electrostatic sensitive device, please observe the international standard IEC 60747-1, Chap. IX.

This product has been designed and qualified for Industrial Level.

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1322-03 04 14

page 3 of 6

5SMY 12M1280

300

275

= 20 V

250

25 °C

200

125 °C

[A]

250

225

200

175

[A]

150

125

100

125 °C

= 15 V

[V]

25 °C

9 10 11 12 13 14

[V]

Fig. 1

Typical on-state characteristics

Fig. 2

Typical transfer characteristics

150

= 600 V

= 6.8 ohm

= ±15 V

= 125 °C

= 60 nH

125

= 600 V

= 150 A

= ±15 V

= 125 °C

= 60 nH

100

, E

off

[mJ]

, E

off

[mJ]

off

150

[A]

300

450

[ohm]

Fig. 3

Typical switching characteristics vs

collector current

Fig. 4

Typical switching characteristics vs

gate resistor

ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.

Doc. No. 5SYA 1322-03 04 14

page 4 of 6

5SMY 12M1280

100

= 0 V

OSC

= 1 MHz

OSC

= 50 mV

= 900 V

ies

= 600 V

[V]

C [nF]

res

oes

= 150 A

= 25 °C

0.0

0.2

0.4

0.6

0.8

[µC]

1.0

1.2

1.4

0.1

[V]

Fig. 5

Typical gate charge characteristics

Fig. 6

Typical capacitances vs

collector-emitter voltage

2.5

1000 V, T

vj(op)

= 150 °C

= ±15 V, R

= 6.8 ohm

2.0

1.5

Cpulse

/ I

1.0

0.5

0.0

500

[V]

1000

1500

Fig. 7

Safe operating area (RBSOA)

ABB Semiconductors AG reserves the right to change specifications without notice.

Doc. No. 5SYA 1322-03 04 14

5 of 6

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