Preliminary
Data Sheet
NP100N04NUJ
MOS FIELD EFFECT TRANSISTOR
Description
R07DS0364EJ0100
Rev.1.00
Jun 13, 2011
The NP100N04NUJ is N-channel MOS Field Effect Transistor designed for high current switching applications.
Features
•
Super low on-state resistance
⎯
R
DS(on)
= 3.0 mΩ MAX. (V
GS
= 10 V, I
D
= 50 A)
•
Low C
iss
: C
iss
= 5600 pF TYP. (V
DS
= 25 V, V
GS
= 0 V)
•
High current rating: I
D(DC)
=
±100
A
•
Designed for automotive application and AEC-Q101 qualified
Ordering Information
Part No.
NP100N04NUJ–S18-AY
∗
1
Lead Plating
Pure Sn (Tin)
Packing
Tube 50 p/tube
Package
TO-262 (MP-25SK) TYP. 1.8g
Note:
∗
1. Pb-free (This product does not contain Pb in the external electrode.)
Absolute Maximum Ratings (T
A
= 25°C)
Item
Drain to Source Voltage (V
GS
= 0 V)
Gate to Source Voltage (V
DS
= 0 V)
Drain Current (DC) (T
C
= 25°C)
Drain Current (pulse)
∗
1
Total Power Dissipation (T
C
= 25°C)
Total Power Dissipation (T
A
= 25°C)
Channel Temperature
Storage Temperature
Repetitive Avalanche Current
∗
2
Repetitive Avalanche Energy
∗
2
Symbol
V
DSS
V
GSS
I
D(DC)
I
D(pulse)
P
T1
P
T2
T
ch
T
stg
I
AR
E
AR
Ratings
40
±20
±100
±400
220
1.8
175
−55
to
+175
60
360
Unit
V
V
A
A
W
W
°C
°C
A
mJ
Thermal Resistance
Channel to Case Thermal Resistance
2
Channel to Ambient Thermal Resistance
∗
R
th(ch-C)
R
th(ch-A)
0.68
83.3
°C/W
°C/W
Notes:
∗
1. T
C
= 25°C, PW
≤
10
μ
s, Duty Cycle
≤
1%
∗
2. T
ch(peak)
≤
150°C, R
G
= 25
Ω
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 1 of 6
NP100N04NUJ
Chapter Title
Electrical Characteristics (T
A
= 25°C)
Item
Zero Gate Voltage Drain Current
Gate Leakage Current
Gate to Source Threshold Voltage
Forward Transfer Admittance
∗
1
Drain to Source On-state
1
Resistance
∗
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Total Gate Charge
Gate to Source Charge
Gate to Drain Charge
Body Diode Forward Voltage
∗
1
Reverse Recovery Time
Reverse Recovery Charge
Note:
∗
1. Pulsed test
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T.
R
G
= 25
Ω
PG.
V
GS
= 20
→
0 V
50
Ω
Symbol
I
DSS
I
GSS
V
GS(th)
| y
fs
|
R
DS(on)
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
G
Q
GS
Q
GD
V
F(S-D)
t
rr
Q
rr
MIN.
TYP.
2.0
45
3.0
87
2.5
5600
920
340
25
15
93
13
110
22
32
0.9
55
77
MAX.
1.0
±100
4.0
3.0
8400
1380
620
60
40
190
40
170
Unit
μ
A
nA
V
S
mΩ
pF
pF
pF
ns
ns
ns
ns
nC
nC
nC
V
ns
nC
Test Conditions
V
DS
= 40 V, V
GS
= 0 V
V
GS
=
±20
V, V
DS
= 0 V
V
DS
= V
GS
, I
D
= 250
μ
A
V
DS
= 5 V, I
D
= 50 A
V
GS
= 10 V, I
D
= 50 A
V
DS
= 25 V,
V
GS
= 0 V,
f = 1 MHz
V
DD
= 20 V, I
D
= 50 A,
V
GS
= 10 V,
R
G
= 0
Ω
V
DD
= 32 V,
V
GS
= 10 V,
I
D
= 100 A
I
F
= 100 A, V
GS
= 0 V
I
F
= 100 A, V
GS
= 0 V,
di/dt = 100 A/
μ
s
1.5
TEST CIRCUIT 2 SWITCHING TIME
D.U.T.
L
V
DD
PG.
R
G
V
GS
R
L
V
DD
V
DS
90%
90%
10%
10%
V
GS
Wave Form
0
10%
V
GS
90%
BV
DSS
I
AS
I
D
V
DD
V
DS
V
GS
0
V
DS
V
DS
Wave Form
0
t
d(on)
t
on
τ
τ
= 1
μ
s
Duty Cycle
≤
1%
t
r
t
d(off)
t
off
t
f
Starting T
ch
TEST CIRCUIT 3 GATE CHARGE
D.U.T.
I
G
= 2 mA
PG.
50
Ω
R
L
V
DD
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 2 of 6
NP100N04NUJ
Chapter Title
Typical Characteristics (T
A
= 25°C)
DERATING FACTOR OF FORWARD BIAS SAFE
OPERATING AREA
TOTAL POWER DISSIPATION vs.
CASE TEMPERATURE
120
dT - Percentage of Rated Power - %
250
P
T
- Total Power Dissipation - W
100
80
60
40
20
0
0
25
50
75
100
125 150
175
200
150
100
50
0
0
25
50
75
100
125
150
175
T
C
- Case Temperature -
°C
T
C
- Case Temperature -
°C
FORWARD BIAS SAFE OPERATING AREA
1000
I
D(Pulse)
PW
I
D
- Drain Current - A
100
I
D(DC)
DC
R
DS(ON)
Limited
(V
GS
= 10 V)
Power Disspation Limited
=1
00
μ
s
1 ms
10
1
Secondary Brakedown
Limited
10 ms
0.1
0.1
T
C
= 25°C
Single Pulse
1
10
100
V
DS
- Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
1000
r
th(t)
- Transient Thermal Resistance -
°C/W
100
10
1
0.1
0.01
R
t h( ch-A)
= 83.3
°
C/W
R
t h( ch- C)
= 0.68
°
C/W
Single Pulse
0.001
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 3 of 6
NP100N04NUJ
DRAIN CURRENT vs.
DRAIN TO SOURCE VOLTAGE
Chapter Title
FORWARD TRANSFER CHARACTERISTICS
450
400
I
D
- Drain Current - A
I
D
- Drain Current - A
1000
100
10
1
0.1
0.01
0.001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
0
1
2
3
4
5
V
DS
= 10 V
Pulsed
T
A
=
−55°C
−25°C
25°C
75°C
125°C
150°C
175°C
350
300
250
200
150
100
50
0
V
GS
= 10 V
Pulsed
V
DS
- Drain to Source Voltage - V
V
GS
- Gate to Source Voltage - V
GATE TO SOURCE THRESHOLD VOLTAGE
vs. CHANNEL TEMPERATURE
V
GS(th)
- Gate to Source Threshold Voltage - V
| y
fs
| - Forward Transfer Admittance - S
FORWARD TRANSFER ADMITTANCE vs. DRAIN
CURRENT
5
4
3
2
1
0
-100
V
DS
= V
GS
I
D
= 250
μA
1000
T
A
=
−55°C
−25°C
25°C
75°C
V
DS
= 10 V
Pulsed
100
10
125°C
150°C
175°C
0.1
1
10
100
1
-50
0
50
100
150
200
T
ch
- Channel Temperature -
°C
I
D
- Drain Current - A
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
DRAIN CURRENT
R
DS(on)
- Drain to Source On-state Resistance - mΩ
R
DS(on)
- Drain to Source On-state Resistance - mΩ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
GATE TO SOURCE VOLTAGE
4
10
9
8
7
6
5
4
3
2
1
0
0
5
10
Pulsed
15
20
I
D
= 100 A
50 A
20 A
3
2
1
V
GS
= 10 V
Pulsed
0
0.1
1
10
100
1000
I
D
- Drain Current - A
V
GS
- Gate to Source Voltage - V
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 4 of 6
NP100N04NUJ
DRAIN TO SOURCE ON-STATE RESISTANCE vs.
CHANNEL TEMPERATURE
R
DS(on)
- Drain to Source On-state Resistance - mΩ
Chapter Title
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE
5
4
3
2
1
0
-100
-50
0
50
100
150
200
V
GS
= 10 V
I
D
= 50 A
Pulsed
C
iss
, C
oss
, C
rss
- Capacitance - pF
100000
10000
C
iss
1000
V
GS
= 0 V
f = 1 MHz
100
0.01
0.1
1
10
C
oss
C
rss
100
T
ch
- Channel Temperature -
°C
V
DS
- Drain to Source Voltage - V
SWITCHING CHARACTERISTICS
DYNAMIC INPUT/OUTPUT CHARACTERISTICS
1000
t
d(on)
, t
r
, t
d(off)
, t
f
- Switching Time - ns
V
DS
- Drain to Source Voltage - V
50
45
40
35
30
25
20
15
10
5
0
0
20
40
60
80
100
V
DS
I
D
= 100 A
V
DD
= 32 V
20 V
8V
V
GS
10
8
7
6
5
4
3
2
1
0
120
V
GS
- Gate to Source Voltage - V
9
100
t
f
t
d(of f )
t
d(on)
10
t
r
V
DD
= 20 V
V
GS
= 10 V
R
G
= 0
Ω
0.1
1
10
100
1
I
D
- Drain Current - A
Q
G
- Gate Charge - nC
REVERSE RECOVERY TIME vs.
DRAIN CURRENT
SOURCE TO DRAIN DIODE FORWARD VOLTAGE
1000
t
rr
- Reverse Recovery Time - ns
I
F
- Diode Forward Current - A
100
V
GS
= 10 V
100
0V
10
10
1
Pulsed
0.1
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
di/dt = 100 A/μs
V
GS
= 0 V
1
0.1
1
10
100
V
F(S-D)
- Source to Drain Voltage - V
I
F
- Drain Current - A
R07DS0364EJ0100 Rev.1.00
Jun 13, 2011
Page 5 of 6
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