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RJK0328DPB-01_15

Description
Silicon N Channel Power MOS FET
File Size83KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJK0328DPB-01_15 Overview

Silicon N Channel Power MOS FET

Preliminary
Datasheet
RJK0328DPB-01
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Capable of 4.5 V gate drive
Low drive current
High density mounting
Low on-resistance
R
DS(on)
= 1.6 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
R07DS0264EJ0500
(Previous: REJ03G1637-0400)
Rev.5.00
Mar 01, 2011
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to case thermal resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
I
DR
I
AP Note 2
E
AR Note 2
Pch
Note3
ch-c
Note3
Tch
Tstg
Note1
Ratings
30
20
60
240
60
30
90
65
1.93
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS0264EJ0500 Rev.5.00
Mar 01, 2011
Page 1 of 6
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