SMF101M~SMF107M
Elektronische Bauelemente
50V ~ 1000 V
1.0 Amp Surface Mount Fast Recovery Rectifier
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Batch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application
in order to optimize board space.
Small plastic SMD package.
High current capability.
Fast switching for high efficiency.
High surge current capability.
Glass-passivated chip junction.
A
SOD-123M
B
F
D
C
E
E
MECHANICAL DATA
Case: Molded plastic, SOD-123 / Mini SMA
Epoxy: UL94-V0 rate flame retardant
Polarity: Indicated by cathode band
Mounting position: Any
Weight: Approximated 0.027 gram
REF.
A
B
C
Millimeter
Min.
Max.
3.50
3.90
1.40
1.80
1.30
1.70
REF.
D
E
F
Millimeter
Min.
Max.
3.60 (MAX.)
0.80 (TYP.)
0.30 (TYP.)
MARKING
Part Number
Marking
Part Number
Marking
SMF101M
SMF102M
SMF103M
SMF104M
F4
F4
F4
F4
SMF105M
SMF106M
SMF107M
F5
F6
F7
PACKAGE INFORMATION
Package
SOD-123M
MPQ
2.5K
Leader Size
7 inch
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Dec-2011 Rev. B
Page 1 of 3
SMF101M~SMF107M
Elektronische Bauelemente
50V ~ 1000 V
1.0 Amp Surface Mount Fast Recovery Rectifier
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C unless otherwise specified)
Part Number
Parameters
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum Continuous reverse voltage
Maximum Instantaneous Forward Voltage
Maximum average forward rectified
current @ T
A
=55°
C
Peak Forward Surge Current, 8.3ms
single half sine-wave superimposed on
rated load (JEDEC method)
Maximum DC Reverse
T
A
=25°
C
Current at Rated DC
C
T
A
=125°
Blocking Voltage
Diode Junction Capacitance
1
2
Symbol
V
RRM
V
RMS
V
R
V
F
I
O
I
FSM
SMF
101M
50
35
50
SMF
102M
100
70
100
SMF
103M
200
140
200
SMF
104M
400
280
400
1.3
1
30
5
SMF
105M
600
420
600
SMF
106M
800
560
800
SMF
107M
1000
700
1000
Unit
V
V
V
V
A
A
I
R
100
C
J
T
rr
R
θJA
T
J,
T
STG
150
42
-65~150, -65~175
15
250
500
µA
pF
nS
° /W
C
°
C
Maximum Reverse Recovery Time
Thermal resistance Junction to ambient
Operating & Storage Temperature
NOTE:
1.
2.
Measured at 1.0MHz and applied reverse voltage of 4.0V D.C.
Reverse recovery time test condition, I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A.
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Dec-2011 Rev. B
Page 2 of 3
SMF101M~SMF107M
Elektronische Bauelemente
50V ~ 1000 V
1.0 Amp Surface Mount Fast Recovery Rectifier
RATINGS AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD
CHARACTERISTICS
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD CURRENT DERATING CURVE
50
INSTANTANEOUS FORWARD CURRENT,(A)
1.2
1.0
0.8
0.6
0.4
0.2
0
0
20
40
60
80
100
120
140
160
180
200
Single Phase
Half Wave 60Hz
Resistive Or Inductive Load
10
3.0
1.0
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
AMBIENT TEMPERATURE ( C)
FIG.4-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
PEAK FORWAARD SURGE CURRENT,(A)
50
0.1
.01
.6
.8
1.0
1.2
1.4
1.6
1.8
2.0
FORWARD VOLT
AGE,(V)
40
FIG.3- TEST CIRCUIT DIAGRAM AND REVERSE
RECOVERY TIME CHARACTERISTICS
50
Ω
NONINDUCTIVE
10
Ω
NONINDUCTIVE
30
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
20
10
(+)
25Vdc
(approx.)
( )
1
Ω
NON-
INDUCTIVE
OSCILLISCOPE
(NOTE 1)
D.U.T.
( )
PULSE
GENERATOR
(NOTE 2)
0
1
5
10
50
100
(+)
NUMBER OF CYCLES AT 60Hz
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
FIG.5-TYPICAL JUNCTION CAPACITANCE
35
30
25
20
15
10
5
trr
+0.5A
|
|
|
|
|
|
|
|
0
-0.25A
JUNCTION CAPACITANCE,(pF)
-1.0A
1cm
SET TIME BASE FOR
50 / 10ns / cm
0
.01
.05
.1
.5
1
5
10
50
100
REVERSE VOLTAGE,(V)
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
09-Dec-2011 Rev. B
Page 3 of 3
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