Preliminary
Datasheet
BCR12LM-12LB
Triac
Medium Power Use
Features
I
T (RMS)
: 12 A
V
DRM
: 600 V
I
FGTI
, I
RGTI
, I
RGT III
: 30 mA
V
iso
: 1800V
The Product guaranteed maximum junction
temperature 150C
Insulated Type
Planar Type
UL Recognized : File No. E223904
R07DS0068EJ0100
Rev.1.00
Jul 27, 2010
Outline
RENESAS Package code: PRSS0003AF-A)
(Package name: TO-220FL)
2
1. T
1
Terminal
2. T
2
Terminal
3. Gate Terminal
3
1
1
2 3
Applications
Switching mode power supply, light dimmer, electronic switch, hair dryer, Television, Stereo system, refrigerator,
Washing machine, infrared kotatsu, and carper, small motor controller, SS relay, solenoid driver, copying machine,
electric tool, electric heater control, and other general purpose control applications
Parameter
Repetitive peak off-state voltage
Note1
Non-repetitive peak off-state voltage
Note1
Symbol
V
DRM
V
DSM
Voltage class
12
600
720
Unit
V
V
R07DS0068EJ0100 Rev.1.00
Jul 27, 2010
Page 1 of 7
BCR12LM-12LB
Parameter
RMS on-state current
Surge on-state current
I
2
t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Isolation voltage
Notes: 1. Gate open.
Symbol
I
T (RMS)
I
TSM
I
2
t
P
GM
P
G (AV)
V
GM
I
GM
Tj
Tstg
—
V
iso
Ratings
12
120
60
5
0.5
10
2
–40 to +150
–40 to +150
1.5
1800
Unit
A
A
A
2
s
W
W
V
A
C
C
g
V
Preliminary
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 92C
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Ta = 25C, AC 1 minute,
T
1
T
2
G terminal to case
Electrical Characteristics
Parameter
Repetitive peak off-state current
On-state voltage
Gate trigger voltage
Note2
Gate trigger curent
Note2
Symbol
I
DRM
V
TM
V
FGT
V
RGT
V
RGT
I
FGT
I
RGT
I
RGT
V
GD
R
th (j-c)
(dv/dt)c
Min.
—
—
—
—
—
—
—
—
0.2/0.1
—
10/1
Typ.
—
—
—
—
—
—
—
—
—
—
—
Max.
2.0
1.6
1.5
1.5
1.5
30
30
30
—
4.0
—
Unit
mA
V
V
V
V
mA
mA
mA
V
C/W
V/s
Test conditions
Tj = 150C, V
DRM
applied
Tc = 25C, I
TM
= 20 A,
instantaneous measurement
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 25C, V
D
= 6 V, R
L
= 6
,
R
G
= 330
Tj = 125C/150C, V
D
= 1/2 V
DRM
Junction to case
Note3
Tj = 125C/150C
Gate non-trigger voltage
Thermal resistance
Critical-rate of rise of off-state
Note4
commutation voltage
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. The contact thermal resistance R
th (c-f)
in case of greasing is 0.5C/W.
4. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C/150C
2. Rate of decay of on-state commutating current
(di/dt)c = –6.0 A/ms
3. Peak off-state voltage
V
D
= 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
(di/dt)c
Time
Time
V
D
Main Current
Main Voltage
(dv/dt)c
R07DS0068EJ0100 Rev.1.00
Jul 27, 2010
Page 2 of 7
BCR12LM-12LB
Preliminary
Performance Curves
Maximum On-State Characteristics
10
2
7
5
200
Rated Surge On-State Current
Surge On-State Current (A)
180
160
140
120
100
80
60
40
20
0
10
0
2 3 4 5 7 10
1
2 3 4 5 7 10
2
On-State Current (A)
3
2
10
1
7
5
3
2
10
0
7
5
0.5
1.0
Tj = 150°C
Tj = 25°C
1.5
2
2.5
3.0
3.5
4.0
On-State Voltage (V)
Conduction Time (Cycles at 60Hz)
Gate Trigger Current (Tj = t°C)
×
100 (%)
Gate Trigger Current (Tj = 25°C)
Gate Characteristics (I, II and III)
5
3
2
Gate Trigger Current vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
Typical Example
V
GM
= 10V
P
GM
= 5W
P
G(AV)
=
0.5W
I
GM
= 2A
Gate Voltage (V)
10
1
7
5
3
V
GT
= 1.5V
2
10
0
7
5
3
2
10
–1
I
RGT I
, I
RGT III
I
FGT I
I
RGT I
I
FGT I
, I
RGT III
V
GD
= 0.1V
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Gate Current (mA)
Junction Temperature (°C)
Gate Trigger Voltage (Tj = t°C)
×
100 (%)
Gate Trigger Voltage (Tj = 25°C)
Gate Trigger Voltage vs.
Junction Temperature
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Maximum Transient Thermal Impedance
Characteristics (Junction to case)
Transient Thermal Impedance (°C/W)
10
2
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
10
–1
10
0
10
1
10
2
10
3
10
4
Typical Example
Junction Temperature (°C)
Conduction Time (Cycles at 60Hz)
R07DS0068EJ0100 Rev.1.00
Jul 27, 2010
Page 3 of 7
BCR12LM-12LB
Maximum Transient Thermal Impedance
Characteristics (Junction to ambient)
Transient Thermal Impedance (°C/W)
10
3
Preliminary
Maximum On-State Power Dissipation
16
On-State Power Dissipation (W)
7
5
3
2
7
5
3
2
7
5
3
2
7
5
3
2
No Fins
14
12
360° Conduction
Resistive,
10
inductive loads
8
6
4
2
0
0
2
4
6
8
10
12
14
16
10
2
10
1
10
0
10
–1
10
1
2 3 5 7
10
2
2 3 5 7
10
3
2 3 5 7
10
4
2 3 5 7
10
5
Conduction Time (Cycles at 60Hz)
RMS On-State Current (A)
Allowable Case Temperature vs.
RMS On-State Current
160
Curves apply regardless
of conduction angle
160
Allowable Ambient Temperature vs.
RMS On-State Current
All fins are black painted
aluminum and greased
120 120 t2.3
100 100 t2.3
60 60 t2.3
80
60
Curves apply
regardless of
40
conduction angle
Resistive,
20
inductive loads
Natural convection
0
0
2
6
4
8
120
100
80
60
40
360° Conduction
20 Resistive,
inductive loads
0
0
2
4
6
8
Ambient Temperature (°C)
140
140
120
100
Case Temperature (°C)
10
12
14
16
10
12
14
16
RMS On-State Current (A)
RMS On-State Current (A)
Repetitive Peak Off-State Current (Tj = t°C)
×
100 (%)
Repetitive Peak Off-State Current (Tj = 25°C)
Allowable Ambient Temperature vs.
RMS On-State Current
160
Repetitive Peak Off-State Current vs.
Junction Temperature
10
5
7
Typical Example
5
3
2
10
4
7
5
3
2
10
3
7
5
3
2
10
2
–60 –40 –20 0 20 40 60 80 100 120 140 160
Ambient Temperature (°C)
140
120
100
80
60
40
20
0
0
Natural convection
No Fins
Curves apply regardless
of conduction angle
Resistive, inductive loads
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
RMS On-State Current (A)
Junction Temperature (°C)
R07DS0068EJ0100 Rev.1.00
Jul 27, 2010
Page 4 of 7
BCR12LM-12LB
Holding Current vs.
Junction Temperature
Holding Current (Tj = t°C)
×
100 (%)
Holding Current (Tj = 25°C)
10
3
7
5
4
3
2
10
2
7
5
4
3
2
10
1
–60 –40 –20 0 20 40 60 80 100 120 140 160
Preliminary
Latching Current vs.
Junction Temperature
10
3
7
5
3
2
10
2
7
5
3
2
10
1
7
5
3
2
Typical Example
Latching Current (mA)
Distribution
T
2
+, G–
Typical Example
T
2
+, G+
Typical Example
T
2
–, G–
0
40
80
120
160
10
0
–40
Junction Temperature (°C)
Junction Temperature (°C)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Junction Temperature
Breakover Voltage (Tj = t°C)
×
100 (%)
Breakover Voltage (Tj = 25°C)
160
140
120
100
80
60
40
20
0
–60 –40 –20 0 20 40 60 80 100 120 140 160
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=125°C)
160
140
120
100
80
60
40
Typical Example
Typical Example
Tj = 125°C
III Quadrant
I Quadrant
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
Junction Temperature (°C)
Rate of Rise of Off-State Voltage (V/μs)
Breakover Voltage (dv/dt = xV/μs)
×
100 (%)
Breakover Voltage (dv/dt = 1V/μs)
Breakover Voltage vs.
Rate of Rise of Off-State Voltage (Tj=150°C)
160
140
120
100
80
Commutation Characteristics (Tj=125°C)
Critical Rate of Rise of Off-State
Commutating Voltage (V/μs)
10
2
Typical Example
7
Tj = 125°C
5
I
T
= 4A
3
τ
= 500μs
2
V
D
= 200V
f = 3Hz
10
1
7
5
3
2
10
0
7
10
0
III Quadrant
Time
Main Voltage
(dv/dt)c
V
D
Main Current
(di/dt)c
I
T
τ
Time
Typical Example
Tj = 150°C
III Quadrant
60
40
Minimum
Characteristics
Value
I Quadrant
I Quadrant
20
0
10
1
2 3 5 7 10
2
2 3 5 7 10
3
2 3 5 7 10
4
2 3
5 7 10
1
2 3
5 7 10
2
Rate of Rise of Off-State Voltage (V/μs)
Rate of Decay of On-State
Commutating Current (A/ms)
R07DS0068EJ0100 Rev.1.00
Jul 27, 2010
Page 5 of 7
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