BTA08 S/A
BTB08 S/A
SENSITIVE GATE TRIACS
.
.
.
FEATURES
VERY LOW I
GT
= 10mA max
LOW I
H
= 25mA max
BTA Family :
INSULATING VOLTAGE = 2500V
(RMS)
(UL RECOGNIZED : E81734)
TO220AB
(Plastic)
DESCRIPTION
The BTA/BTB08 S/A triac family are high perform-
ance glass passivated PNPN devices.
These parts are suitables for general purpose ap-
plications where gate high sensitivity is required.
Application on 4Q such as phase control and static
switching.
ABSOLUTE RATINGS
(limiting values)
Symbol
IT(RMS)
RMS on-state current
(360° conduction angle)
Non repetitive surge peak on-state current
( Tj initial = 25°C )
I2 t value
Critical rate of rise of on-state current
Gate supply : IG = 50mA diG/dt = 0.1A/µs
Parameter
BTA
BTB
ITSM
Tc = 75°C
Tc = 80°C
tp = 8.3 ms
tp = 10 ms
I2t
dI/dt
tp = 10 ms
Repetitive
F = 50 Hz
Non
Repetitive
Tstg
Tj
Tl
Storage and operating junction temperature range
Maximum lead temperature for soldering during 10 s at 4.5 mm
from case
Parameter
400 S/A
VDRM
VRRM
Repetitive peak off-state voltage
Tj = 110°C
400
BTA / BTB08-
600 S/A
600
700 S/A
700
V
84
80
32
10
50
- 40 to + 150
- 40 to + 110
260
°C
°C
°C
A2s
A/µs
A
Value
8
Unit
A
Symbol
Unit
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BTA08 S/A / BTB08 S/A
THERMAL RESISTANCES
Symbol
Rth (j-a)
Junction to ambient
BTA
BTB
Rth (j-c) AC Junction to case for 360° conduction angle
( F= 50 Hz)
BTA
BTB
Parameter
Value
60
4.4
3.2
3.3
2.4
°C/W
Unit
°C/W
°C/W
Rth (j-c) DC Junction to case for DC
GATE CHARACTERISTICS
(maximum values)
PG (AV) = 1W
PGM = 10W (tp = 20
µs)
IGM = 4A (tp = 20
µs)
VGM = 16V (tp = 20
µs).
ELECTRICAL CHARACTERISTICS
Symbol
Test Conditions
Quadrant
Suffix
S
IGT
VD=12V
(DC) RL=33Ω
Tj=25°C
I-II-III
IV
VGT
VGD
tgt
IL
VD=12V
(DC) RL=33Ω
Tj=25°C
Tj=110°C
Tj=25°C
Tj=25°C
I-II-III-IV
I-II-III-IV
I-II-III-IV
I-III-IV
II
IH *
VTM *
IDRM
IRRM
dV/dt *
(dV/dt)c *
IT= 100mA gate open
ITM = 11A tp= 380µs
VDRM
VRRM
Rated
Rated
Tj=25°C
Tj=25°C
Tj=25°C
Tj=110°C
Tj=110°C
Tj=110°C
MAX
MAX
MAX
MAX
MIN
TYP
10
5
MAX
MAX
MAX
MIN
TYP
TYP
20
40
25
1.75
0.01
0.75
10
5
V/µs
V/µs
10
10
1.5
0.2
2
20
40
25
mA
V
mA
A
10
25
V
V
µs
mA
mA
Unit
VD=VDRM RL=3.3kΩ
VD=VDRM IG = 40mA
dIG/dt = 0.5A/µs
IG= 1.2 IGT
Linear slope up to VD=67%VDRM
gate open
(dI/dt)c= 3.5A/ms
* For either polarity of electrode A
2
voltage with reference to electrode A
1
.
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BTA08 S/A / BTB08 S/A
ORDERING INFORMATION
Package
IT(RMS)
A
BTA
(Insulated)
8
VDRM / VRRM
V
400
600
700
BTB
(Uninsulated)
400
600
700
S
X
X
X
X
X
X
Sensitivity Specification
A
X
X
X
X
X
X
Fig.1 : Maximum RMS power dissipation versus RMS
on-state current (F=50Hz).
(curves are cut off by (dI/dt)c limitation)
Fig.2 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTA).
Fig.3 : Correlation between maximum RMS power
dissipation and maximum allowable temperatures (Tamb
and Tcase) for different thermal resistances heatsink +
contact (BTB).
Fig.4 : RMS on-state current versus case temperature.
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BTA08 S/A / BTB08 S/A
Fig.5 : Relative variation of thermal impedance versus
pulse duration.
Zth/Rth
1
Fig.6 : Relative variation of gate trigger current and
holding current versus junction temperature.
Zt h( j-c)
0.1
Zt h(j-a)
tp( s)
0.01
1E-3
1E-2
1E-1
1E +0
1 E +1
1 E +2 5 E +2
Fig.7 : Non Repetitive surge peak on-state current
versus number of cycles.
Fig.8 : Non repetitive surge peak on-state current for a
sinusoidal pulse with width : t
≤
10ms, and
corresponding value of I2 t.
Fig.9 : On-state characteristics (maximum values).
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