SM120N~SM1100N
Elektronische Bauelemente
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
RoHS Compliant Product
A suffix of “-C” specifies halogen-free and RoHS Compliant
FEATURES
Batch process design, excellent power dissipation offers
Better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
optimize board space.
Low power loss, high efficiency.
High current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
Very tiny plastic SMD package.
Ultra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
Lead-free parts meet environmental standards of
MIL-STD-19500/228
A
SOD-323N
B
F
D
C
E
E
REF.
A
B
C
Millimeter
Min.
Max.
2.30
2.70
1.05
1.45
0.80
1.20
REF.
D
E
F
Millimeter
Min.
Max.
1.7
2.1
0.4 TYP
0.30 TYP
PACKAGING INFORMATION
Epoxy: UL94-V0 rated flame retardant
Case: Molded plastic, SOD323N
Terminals: Plated terminals,
solderable per MIL-STD-750, method 2026.
Polarity: Indicated by cathode band
Weight : 0.008 gram
1
Cathode
2
Anode
MARKING CODE
PART NUMBER
SM120N
SM130N
SM140N
SM150N
MARKING CODE
12
13
14
15
PART NUMBER
SM160N
SM180N
SM1100N
MARKING CODE
16
18
10
MAXIMUM RATINGS
(T
a
= 25°C unless otherwise specified.)
PART NUMBERS
PARAMETERS
SYMB
OL
SM
120
N
SM
130
N
SM
140
N
SM
150
N
SM
160
N
SM
180
N
SM
1100
N
UNIT
TESTING CONDITION
Repetitive Peak Reverse Voltage
RMS Voltage (Max.)
Reverse Voltage (Max.)
Forward Voltage (Max.)
Forward
Rectified Current (Max.)
Peak Forward Surge Current
V
RRM
V
RMS
V
R
V
F
I
O
20
14
20
30
21
30
0.50
40
28
40
50
35
50
0.70
1.0
60
42
60
80
56
80
100
70
100
0.85
V
V
V
V
A
See Fig.1
8.3ms single half sine-wave
I
FSM
30
0.5
10
90
120
-65 ~ 175, -55 to 125
-65 ~ 175, -55 to 150
A
superimposed on rated load
(JEDEC method)
Reverse Current (Max.)
Thermal Resistance (Typ.)
Diode Junction
Capacitance (Typ.)
Storage and Operating
Temperature Range
I
R
R
θJA
C
J
T
STG
,
T
J
mA
°
C/W
pF
°
C
V
R
=V
RRM
, T
A
=25°C
V
R
=V
RRM
, T
A
=125°C
Junction to ambient
f=1MHz and applied 4V DC
reverse voltage
11-Feb-2010 Rev. A
Page 1 of 2
SM120N~SM1100N
Elektronische Bauelemente
20 ~ 100 V
1.0 Amp Surface Mount Schottky Barrier Rectifiers
RATINGS AND CHARACTERISTIC CURVES
FIG.1-TYPICAL FORWARD CURRENT DERATING CURVE
AVERAGE FORWARD CURRENT,(A)
FIG.2-TYPICAL FORWARD
CHARACTERISTICS
1.2
1.0
50
INSTANTANEOUS FORWARD CURRENT,(A)
0-
N
0.8
15
SM
12
SM
0.6
0.4
0.2
0
0
20
40
60
80
10
3.0
1.0
SM
12
0-
N
~S
M
14
~S
M
16
0-
N
0-
100
120
140
160
180
200
SM
15
0-
N
AMBIENT TEMPERATURE,( C)
FIG.3-MAXIMUM NON-REPETITIVE FORWARD
SURGE CURRENT
30
0-
N
N
10
M1
~S
~
1
SM
40
-N
0-
N
00
11
M
S
-N
18
SM
N
0-
T
J
=25 C
Pulse Width 300us
1% Duty Cycle
0.1
PEAK FORWARD SURGE CURRENT,(A)
24
.01
.1
.3
.5
.7
.9
1.1
1.3
1.5
18
T
J
=25 C
8.3ms Single Half
Sine Wave
JEDEC method
FORWARD VOLT
AGE,(V)
12
6
FIG.5 - TYPICAL REVERSE
0
1
5
10
50
100
CHARACTERISTICS
100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL JUNCTION CAPACITANCE
350
300
250
200
150
100
50
0
JUNCTION CAPACITANCE,(pF)
REVERSE LEAKAGE CURRENT, (mA)
10
1.0
T
J
=75 C
.1
T
J
=25 C
.01
.05
.1
.5
1
5
10
50
100
.01
0
20
40
60
80
100 120 140
REVERSE VOLTAGE,(V)
PERCENT OF RATED PEAK REVERSE VOLTAGE,(%)
11-Feb-2010 Rev. A
Page 2 of 2
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