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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
NP80N055MDG, NP80N055NDG, NP80N055PDG
SWITCHING
N-CHANNEL POWER MOS FET
DESCRIPTION
The NP80N055MDG, NP80N055NDG, and NP80N055PDG are N-channel MOS Field Effect Transistors designed
for high current switching applications.
ORDERING INFORMATION
PART NUMBER
NP80N055MDG-S18-AY
NP80N055NDG-S18-AY
NP80N055PDG-E1B-AY
NP80N055PDG-E2B-AY
Note
Note
Note
Note
LEAD PLATING
PACKING
Tube
50 p/tube
PACKAGE
TO-220 (MP-25K) typ. 1.9 g
TO-262 (MP-25SK) typ. 1.8 g
TO-263 (MP-25ZP) typ. 1.5 g
Pure Sn (Tin)
Tape
1000 p/reel
Note
Pb-free (This product does not contain Pb in the external electrode.)
FEATURES
•
Logic level
•
Super low on-state resistance
- NP80N055MDG, NP80N055NDG
R
DS(on)1
= 6.9 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
R
DS(on)2
= 11.2 mΩ MAX. (V
GS
= 4.5 V, I
D
= 35 A)
- NP80N055PDG
R
DS(on)1
= 6.6 mΩ MAX. (V
GS
= 10 V, I
D
= 40 A)
R
DS(on)2
= 10.9 mΩ MAX. (V
GS
= 4.5 V, I
D
= 35 A)
•
High current rating
I
D(DC)
=
±80
A
•
Low input capacitance
C
iss
= 4600 pF TYP.
•
Designed for automotive application and AEC-Q101 qualified
(TO-220)
(TO-262)
(TO-263)
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all products and/or types are available in every country. Please check with an NEC Electronics
sales representative for availability and additional information.
Document No. D19796EJ1V0DS00 (1st edition)
Date Published May 2009 NS
Printed in Japan
2009
FPGA/CPLD
京公网安备 11010802033920号
EEWORLD
