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IRF2807

Description
82 A, 75 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size752KB,8 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet Parametric View All

IRF2807 Overview

82 A, 75 V, 0.013 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF2807 Parametric

Parameter NameAttribute value
Minimum breakdown voltage75 V
Number of terminals3
Processing package descriptionTO-220AB, 3 PIN
stateTransferred
Rated avalanche energy340 mJ
Shell connectionDRAIN
structureSINGLE WITH BUILT-IN DIODE
Maximum leakage current82 A
Maximum drain on-resistance0.0130 ohm
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
jedec_95_codeTO-220AB
jesd_30_codeR-PSFM-T3
jesd_609_codee0
moisture_sensitivity_levelNOT SPECIFIED
Number of components1
operating modeENHANCEMENT MODE
Packaging MaterialsPLASTIC/EPOXY
packaging shapeRECTANGULAR
Package SizeFLANGE MOUNT
eak_reflow_temperature__cel_NOT SPECIFIED
larity_channel_typeN-CHANNEL
Maximum leakage current pulse280 A
qualification_statusCOMMERCIAL
surface mountNO
terminal coatingTIN LEAD
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
ime_peak_reflow_temperature_max__s_NOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
dditional_featureAVALANCHE RATED, HIGH RELIABILITY
IRF2807
TO-220AB
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Power MOSFET
Description
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
D
V
DSS
= 75V
R
DS(on)
= 13mΩ
G
S
I
D
= 82A‡
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
82
‡
58
280
230
1.5
± 20
43
23
5.9
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
0.65
–––
62
Units
°C/W
2014-8-9
1
www.kersemi.com
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