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IRF540N

Description
33 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
Categorysemiconductor    Discrete semiconductor   
File Size708KB,8 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet Parametric View All

IRF540N Overview

33 A, 100 V, 0.044 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

IRF540N Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage100 V
Processing package descriptionTO-220AB, 3 PIN
stateTRANSFERRED
packaging shapeRectangle
Package SizeFlange mounting
Terminal formTHROUGH-hole
terminal coatingNOT SPECIFIED
Terminal locationsingle
Packaging MaterialsPlastic/Epoxy
structureSingle WITH BUILT-IN diode
Shell connectionDRAIN
Number of components1
transistor applicationsswitch
Transistor component materialssilicon
Channel typeN channel
field effect transistor technologyMetal-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeuniversal power supply
Maximum leakage current33 A
Rated avalanche energy185 mJ
Maximum drain on-resistance0.0440 ohm
Maximum leakage current pulse110 A
IRF540N
TO-220AB
l
l
l
l
l
l
Advanced Process Technology
Ultra Low On-Resistance
Dynamic dv/dt Rating
175°C Operating Temperature
Fast Switching
Fully Avalanche Rated
Power MOSFET
Description
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal
resistance and low package cost of the TO-220 contribute
to its wide acceptance throughout the industry.
D
V
DSS
= 100V
R
DS(on)
= 44mΩ
G
S
I
D
= 33A
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current

Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Avalanche Current

Repetitive Avalanche Energy

Peak Diode Recovery dv/dt
ƒ
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
33
23
110
130
0.87
± 20
16
13
7.0
-55 to + 175
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Units
A
W
W/°C
V
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θCS
R
θJA
Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
–––
0.50
–––
Max.
1.15
–––
62
Units
°C/W
2014-8-9
1
www.kersemi.com
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