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IRFL1006N

Description
Advanced Process Technology
File Size782KB,9 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
Download Datasheet View All

IRFL1006N Overview

Advanced Process Technology

IRFL1006
S O T -2 2 3
l
l
l
l
l
Surface Mount
Advanced Process Technology
Dynamic dv/dt Rating
Fast Switching
Fully Avalanche Rated
Power MOSFET
Description
The SOT-223 package is designed for surface-mount
using vapor phase, infra red, or wave soldering techniques.
Its unique package design allows for easy automatic pick-
and-place as with other SOT or SOIC packages but has
the added advantage of improved thermal performance
due to an enlarged tab for heatsinking. Power dissipation
of 1.0W is possible in a typical surface mount application.
D
V
DSS
= 60V
R
DS(on)
= 0.22Ω
G
S
I
D
= 1.6A
Absolute Maximum Ratings
Parameter
I
D
@ T
A
= 25°C
I
D
@ T
A
= 25°C
I
D
@ T
A
= 70°C
I
DM
P
D
@T
A
= 25°C
P
D
@T
A
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J,
T
STG
Continuous Drain Current, V
GS
@ 10V**
Continuous Drain Current, V
GS
@ 10V*
Continuous Drain Current, V
GS
@ 10V*
Pulsed Drain Current

Power Dissipation (PCB Mount)**
Power Dissipation (PCB Mount)*
Linear Derating Factor (PCB Mount)*
Gate-to-Source Voltage
Single Pulse Avalanche Energy‚
Avalanche Current
Repetitive Avalanche Energy*
Peak Diode Recovery dv/dt
ƒ
Junction and Storage Temperature Range
Max.
2.3
1.6
1.3
6.4
2.1
1.0
8.3
± 20
54
1.6
0.1
5.0
-55 to + 150
Units
A
W
W
mW/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJA
R
θJA
Junction-to-Amb. (PCB Mount, steady state)*
Junction-to-Amb. (PCB Mount, steady state)**
Typ.
90
50
Max.
120
60
Units
°C/W
2014-8-9
1
www.kersemi.com
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