IRLR024N
IRLU024N
l
l
l
l
l
l
Logic-Level Gate Drive
Surface Mount (IRLR024N)
Straight Lead (IRLU024N)
Advanced Process Technology
Fast Switching
Fully Avalanche Rated
D
V
DSS
= 55V
G
S
R
DS(on)
= 0.065Ω
I
D
= 17A
Description
The D-PAK is designed for surface mounting using vapor phase, infrared, or
wave soldering techniques. The straight lead version (IRFU series) is for
through-hole mounting applications. Power dissipation levels up to 1.5 watts
are possible in typical surface mount applications.
D-Pak
IRLR024N
I-Pak
IRLU024N
Absolute Maximum Ratings
Parameter
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
V
GS
E
AS
I
AR
E
AR
dv/dt
T
J
T
STG
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Max.
17
12
72
45
0.3
± 16
68
11
4.5
5.0
-55 to + 175
300 (1.6mm from case )
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Case-to-Ambient (PCB mount)**
Junction-to-Ambient
Typ.
–––
–––
–––
Max.
3.3
50
110
Units
°C/W
2014-8-24
1
www.kersemi.com
IRLR/U024N
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
V
(BR)DSS
∆V
(BR)DSS
/∆T
J
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Internal Drain Inductance
Internal Source Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
R
DS(on)
V
GS(th)
g
fs
I
DSS
I
GSS
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
L
D
L
S
C
iss
C
oss
C
rss
Min. Typ. Max. Units
Conditions
55
––– –––
V
V
GS
= 0V, I
D
= 250µA
––– 0.061 ––– V/°C Reference to 25°C, I
D
= 1mA
––– ––– 0.065
V
GS
= 10V, I
D
= 10A
––– ––– 0.080
Ω
V
GS
= 5.0V, I
D
= 10A
––– ––– 0.110
V
GS
= 4.0V, I
D
= 9.0A
1.0
––– 2.0
V
V
DS
= V
GS
, I
D
= 250µA
8.3
––– –––
S
V
DS
= 25V, I
D
= 11A
––– ––– 25
V
DS
= 55V, V
GS
= 0V
µA
––– ––– 250
V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
––– ––– 100
V
GS
= 16V
nA
––– ––– -100
V
GS
= -16V
––– ––– 15
I
D
= 11A
––– ––– 3.7
nC V
DS
= 44V
––– ––– 8.5
V
GS
= 5.0V, See Fig. 6 and 13
–––
7.1 –––
V
DD
= 28V
–––
74 –––
I
D
= 11A
ns
–––
20 –––
R
G
= 12Ω, V
GS
= 5.0V
–––
29 –––
R
D
= 2.4Ω, See Fig. 10
Between lead,
–––
4.5
–––
nH
6mm (0.25in.)
G
from package
––– 7.5 –––
and center of die contact
––– 480 –––
V
GS
= 0V
––– 130 –––
pF
V
DS
= 25V
–––
61 –––
ƒ = 1.0MHz, See Fig. 5
D
S
Source-Drain Ratings and Characteristics
I
S
I
SM
V
SD
t
rr
Q
rr
t
on
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 17
showing the
A
G
integral reverse
72
––– –––
S
p-n junction diode.
––– ––– 1.3
V
T
J
= 25°C, I
S
= 11A, V
GS
= 0V
––– 60
90
ns
T
J
= 25°C, I
F
= 11A
––– 130 200
nC
di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11)
Pulse width
≤
300µs; duty cycle
≤
2%.
This is applied for I-PAK, L
S
of D-PAK is measured between
lead and center of die contact
V
DD
= 25V, starting T
J
= 25°C, L = 790µH
R
G
= 25Ω, I
AS
= 11A. (See Figure 12)
I
SD
≤
11A, di/dt
≤
290A/µs, V
DD
≤
V
(BR)DSS
,
T
J
≤
175°C
Uses IRLZ24N data and test conditions.
2014-8-24
2
www.kersemi.com
IRLR/U024N
100
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
100
10
I
D
, D rain-to-S ource C urrent (A )
I
D
, D ra in -to-S ou rce C u rrent (A )
VGS
15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
TOP
10
2 .5V
1
1
2.5 V
20µ s P U L S E W ID T H
T
J
= 2 5°C
0.1
1
10
0.1
A
0.1
0.1
1
2 0µ s P U LS E W ID T H
T
J
= 1 75 °C
10
100
A
100
V
D S
, D rain-to-S ource V oltage (V )
V
D S
, D rain-to-S ource V oltage (V )
Fig 1.
Typical Output Characteristics
Fig 2.
Typical Output Characteristics
100
3.0
T
J
= 2 5 °C
R
D S (on )
, D rain -to-S ou rc e O n R es is tan c e
(N orm a liz ed)
I
D
=
17
A
18
A
I
D
, D rain-to-So urce C urren t (A )
2.5
T
J
= 1 7 5 °C
10
2.0
1.5
1
1.0
0.5
0.1
2
3
4
5
6
V
DS
= 1 5V
2 0µ s P U L S E W ID TH
7
8
9
10
A
0.0
-60
-40 -20
0
20
40
60
80
V
G S
= 1 0V
100 120 140 160 180
A
V
G S
, G ate-to -So urce Voltag e (V)
T
J
, J unc tion T em perature (°C )
Fig 3.
Typical Transfer Characteristics
Fig 4.
Normalized On-Resistance
Vs. Temperature
www.kersemi.com
2014-8-24
3
IRLR/U024N
800
V
G S
, G ate-to-S ource V oltage (V )
C , Capacitance (pF)
600
C
iss
V
GS
C
is s
C
rs s
C
o ss
=
=
=
=
0V ,
f = 1M H z
C
g s
+ C
g d
, C
d s
S H O R T E D
C
gd
C
d s
+ C
gd
15
I
D
= 11 A
V
D S
= 4 4V
V
D S
= 2 8V
12
9
400
C
oss
6
200
C
rss
3
0
1
10
100
A
0
0
4
8
FO R TE S T C IRC UIT
S E E FIG U R E 1 3
12
16
20
A
V
D S
, D rain-to-S ourc e V oltage (V )
Q
G
, T otal G ate C harge (nC )
Fig 5.
Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6.
Typical Gate Charge Vs.
Gate-to-Source Voltage
100
1000
I
S D
, R ev ers e D rain C urre nt (A )
O P E R AT ION IN TH IS AR E A LIM ITE D
B Y R
D S (on)
I
D
, D rain C urrent (A )
T
J
= 1 75 °C
T
J
= 25°C
10
100
1 0µ s
10
1 00 µ s
1
0.4
0.8
1.2
1.6
V
G S
= 0V
A
1
1
T
C
= 25°C
T
J
= 175°C
S ingle P ulse
10
1m s
1 0m s
A
100
2.0
V
S D
, S ource-to-D rain V oltage (V)
V
D S
, Drain-to-Source Voltage (V)
Fig 7.
Typical Source-Drain Diode
Forward Voltage
2014-8-24
Fig 8.
Maximum Safe Operating Area
4
www.kersemi.com
IRLR/U024N
20
V
DS
V
GS
R
D
D.U.T.
+
I
D
, Drain Current (A)
15
R
G
-
V
DD
5V
10
Pulse Width
≤ 1
µs
Duty Factor
≤ 0.1 %
Fig 10a.
Switching Time Test Circuit
5
V
DS
90%
0
25
50
75
100
125
150
175
T
C
, Case Temperature ( ° C)
10%
V
GS
Fig 9.
Maximum Drain Current Vs.
Case Temperature
t
d(on)
t
r
t
d(off)
t
f
Fig 10b.
Switching Time Waveforms
10
Therm al R esponse (Z
thJ C
)
D = 0 .5 0
1
0 .2 0
0 .1 0
0 .0 5
0 .0 2
0 .0 1
0.1
P
D M
S IN G L E P U L S E
(T H E R M A L R E S P O N S E )
N ote s:
1 . D u ty fac tor D = t
t
1
t2
1
/ t
2
0.01
0.00001
2. P e a k T
J
= P
D M
x Z
th JC
+ T C
A
1
0.0001
0.001
0.01
0.1
t
1
, R e ctan g ula r P ulse D u ratio n (sec )
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
2014-8-24
5
www.kersemi.com
Microcontroller MCU
京公网安备 11010802033920号
EEWORLD
