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IRLU8743PBF

Description
160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Categorysemiconductor    Discrete semiconductor   
File Size1MB,11 Pages
ManufacturerKersemi Electronic
Websitehttp://www.kersemi.com
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IRLU8743PBF Overview

160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA

IRLU8743PBF Parametric

Parameter NameAttribute value
Number of terminals3
Minimum breakdown voltage30 V
Processing package descriptionLEAD FREE, IPAK-3
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRECTANGULAR
Package SizeIN-LINE
Terminal formTHROUGH-HOLE
terminal coatingMATTE TIN OVER NICKEL
Terminal locationSINGLE
Packaging MaterialsPLASTIC/EPOXY
structureSINGLE WITH BUILT-IN DIODE
Shell connectionDRAIN
Number of components1
transistor applicationsSWITCHING
Transistor component materialsSILICON
Channel typeN-CHANNEL
field effect transistor technologyMETAL-OXIDE SEMICONDUCTOR
operating modeENHANCEMENT
Transistor typeGENERAL PURPOSE POWER
Maximum leakage current160 A
Rated avalanche energy250 mJ
Maximum drain on-resistance0.0031 ohm
Maximum leakage current pulse640 A
IRLR8743PBF
IRLU8743PBF
Applications
l
High Frequency Synchronous Buck
Converters for Computer Processor Power
l
High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l
Lead-Free
Benefits
l
Very Low RDS(on) at 4.5V V
GS
l
Ultra-Low Gate Impedance
l
Fully Characterized Avalanche Voltage
and Current
D-Pak
IRLR8743PbF
I-Pak
IRLU8743PbF
V
DSS
30V
R
DS(on)
max
3.1m
:
Max.
30
± 20
160
640
135
68
0.90
-55 to + 175
300 (1.6mm from case)
Qg
39nC
Units
V
Absolute Maximum Ratings
Parameter
V
DS
V
GS
I
D
@ T
C
= 25°C
I
D
@ T
C
= 100°C
I
DM
P
D
@T
C
= 25°C
P
D
@T
C
= 100°C
T
J
T
STG
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
GS
@ 10V
Continuous Drain Current, V
GS
@ 10V
Pulsed Drain Current
g
Maximum Power Dissipation
g
Maximum Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
™
f
113
f
A
W
W/°C
°C
Soldering Temperature, for 10 seconds
Thermal Resistance
Parameter
R
θJC
R
θJA
R
θJA
Junction-to-Case
Junction-to-Ambient (PCB Mount)
Junction-to-Ambient
Typ.
Max.
1.11
50
110
Units
°C/W
–––
–––
–––
2014-5-25
1
www.kersemi.com

IRLU8743PBF Related Products

IRLU8743PBF IRLR8743
Description 160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA 160 A, 30 V, 0.0031 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-251AA
Number of terminals 3 3
Minimum breakdown voltage 30 V 30 V
Processing package description LEAD FREE, IPAK-3 LEAD FREE, IPAK-3
Lead-free Yes Yes
EU RoHS regulations Yes Yes
state ACTIVE ACTIVE
packaging shape RECTANGULAR RECTANGULAR
Package Size IN-LINE IN-LINE
Terminal form THROUGH-HOLE THROUGH-HOLE
terminal coating MATTE TIN OVER NICKEL MATTE TIN OVER NICKEL
Terminal location SINGLE SINGLE
Packaging Materials PLASTIC/EPOXY PLASTIC/EPOXY
structure SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Shell connection DRAIN DRAIN
Number of components 1 1
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Channel type N-CHANNEL N-CHANNEL
field effect transistor technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
operating mode ENHANCEMENT ENHANCEMENT
Transistor type GENERAL PURPOSE POWER GENERAL PURPOSE POWER
Maximum leakage current 160 A 160 A
Rated avalanche energy 250 mJ 250 mJ
Maximum drain on-resistance 0.0031 ohm 0.0031 ohm
Maximum leakage current pulse 640 A 640 A
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