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D44H11

Description
10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
CategoryDiscrete semiconductor    The transistor   
File Size239KB,4 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
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10 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB

D44H11 Parametric

Parameter NameAttribute value
Brand NameFairchild Semiconduc
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeTO-220
package instructionFLANGE MOUNT, R-PSFM-T3
Contacts3
Manufacturer packaging codeTO-220, MOLDED, 3LEAD, JEDEC VARIATION AB
Reach Compliance Codecompli
ECCN codeEAR99
Maximum collector current (IC)10 A
Collector-emitter maximum voltage80 V
ConfigurationSINGLE
Minimum DC current gain (hFE)40
JEDEC-95 codeTO-220AB
JESD-30 codeR-PSFM-T3
JESD-609 codee3
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Polarity/channel typeNPN
Maximum power dissipation(Abs)50 W
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)50 MHz
D44H11TU — NPN Epitaxial Silicon Transistor
March 2009
D44H11TU
NPN Epitaxial Silicon Transistor
• Low Collector-Emitter Saturation Voltage : V
CE
(sat) = 1V (Max.) @ 8A
• Fast Switching Speeds
• Complement to KSE45H
1
TO-220
2.Collector
3.Emitter
1.Base
Absolute Maximum Ratings
T
C
=25°C unless otherwise noted
Symbol
V
CEO
V
EBO
I
C
I
CP
P
C
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector-Current (Pulse)
Collector Dissipation (T
C
=25°C)
Collector Dissipation (T
a
=25°C)
T
J
T
STG
Junction Temperature
Storage Temperature
Parameter
Value
80
5
10
20
50
1.67
150
- 55 ~ 150
Units
V
V
A
A
W
W
°C
°C
Electrical Characteristics
T
C
=25°C unless otherwise noted
Symbol
BV
CEO
BV
EBO
I
CES
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
ON
t
STG
t
F
Parameter
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Current Gain Bandwidth Product
Output Capacitance
Turn On Time
Storage Time
Fall Time
Test Condition
I
C
= 10mA, I
B
= 0
I
E
= 500μA, I
C
= 0
V
CE
= Rated V
CEO,
V
EB
= 0
V
EB
= 5V, I
C
= 0
V
CE
= 1V, I
C
= 2A
I
C
= 8A, I
B
= 0.4A
I
C
= 8A, I
B
= 0.8A
V
CE
= 10V, I
C
= 0.5A
V
CB
= 10V, f = 1MHz
V
CC
= 20V, I
C
= 5A
I
B1
= - I
B2
= 0.5A
Min.
80
5
Typ.
Max.
Units
V
V
10
100
60
1
1.5
50
130
300
500
140
μA
μA
V
V
MHz
pF
ns
ns
ns
NOTES:
1) These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3) These ratings are based on a maximum junction temperature of 150degrees C.
© 2009 Fairchild Semiconductor Corporation
D44H11TU Rev. B1
1
www.fairchildsemi.com
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