SBYV28-50—SBYV28-200
3.0A Axial Leaded Soft Recovery Ultrafast Plastic Rectifier
Features
•
•
•
•
•
•
•
•
Glass passivated chip junction
Ultrafast reverse recovery time
Low forward voltage drop
Low leakage current
Low switching losses, high efficiency
High forward surge capability
Solder dip 260 °C, 40 s
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
B
A
D
DO-201AD
Dim
A
B
C
D
Min
25.40
7.20
1.20
4.80
Max
¾
9.50
1.30
5.30
C
Mechanical Data
·
Case:
DO-201AD
Epoxy meets UL 94V-0 flammability rating
·
Terminals:
Matte tin plated leads, solderable per
J-STD-002 and JESD22-B102
E3 suffix for consumer grade, meets JESD 201 class
1A whisker test
·
Polarity:
Color band denotes cathode end
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Minimum reverse breakdown voltage at 100 µA
Maximum average forward rectified current
0.375" (9.5 mm) lead lengths at T
L
= 85 °C
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating and storage temperature range
PARAMETER
Maximum
instantaneous
forward voltage
(1)
Maximum DC reverse
current at rated DC
blocking voltage
Maximum reverse
recovery time
Typical junction
capacitance
Note:
(1) Pulse test: t
p
= 300 µs, duty cycle
≤
2 %
I
F
= 0.5 A,
I
R
= 1.0 A,
I
rr
= 0.25 A
4.0 V, 1 MHz
TEST CONDITIONS
3.5 A
T
J
= 25 °C
T
J
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
SYMBOL
V
RRM
V
RMS
V
DC
V
BR
I
F(AV)
I
FSM
T
J
, T
STG
SYMBOL
V
F
@ T
A
= 25°C unless otherwise specified
SBYV28-100 SBYV28-150 SBYV28-200
100
70
100
110
3.5
90
- 55 to + 150
150
105
150
165
200
140
200
220
UNIT
V
V
V
V
A
A
°C
UNIT
V
SBYV28-50
50
35
50
55
SBYV28-50
SBYV28-100 SBYV28-150 SBYV28-200
1.1
0.89
5.0
300
I
R
µA
T
J
= 25 °C
t
rr
20
ns
C
J
20
pF
1 of 2
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
6.0
90
Average Forward Rectified Current (A)
Peak Forward Surge Current (A)
5.0
Resistive or Inductive Load
0.375" (9.5 mm) Lead Length
T
L
Lead Temperature
80
70
60
50
40
30
20
10 ms Single Half Sine-Wave
T
J
= 175 °C
4.0
3.0
2.0
T
A
, Ambient Temperature
P.C.B. Mounted
0.5 x 0.5" (12 x 12 mm)
Copper Pads
0
25
50
75
100
125
150
175
1.0
0
1
10
100
Temperature (°C)
Number
of Cycles at 50 Hz
Figure 1. Forward Current Derating Curves
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
100
60
Instantaneous Forward Current (A)
Recovered Store Change/Reverse
Recovery Time, nC/ns
T
J
= 100 °C
10
I
F
= 4.0 A
V
R
= 30
V
50
dI/dt = 150 A/µs
dI/dt = 100 A/µs
40
dI/dt = 20 A/µs
dI/dt = 50 A/µs
dI/dt = 100 A/µs
dI/dt = 150 A/µs
dI/dt = 50 A/µs
20
dI/dt = 20 A/µs
1
T
J
= 25 °C
Pulse
Width
= 300
µs
1
%
Duty Cycle
30
0.1
10
t
rr
Q
rr
0
0
25
50
75
100
125
150
175
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
Instantaneous Forward
Voltage
(V)
Junction Temperature (°C)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Reverse Switching Characteristics
1000
100
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Instantaneous Reverse Leakage
Current (µA)
T
J
= 100 °C
10
Junction Capacitance (pF)
80
100
100
10
1
T
J
= 25 °C
0.1
0.01
0
20
40
60
1
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
Reverse
Voltage
(V)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Junction Capacitance
2of2
Microcontroller MCU
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