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SS12

Description
1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size112KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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SS12 Overview

1 A, 20 V, SILICON, SIGNAL DIODE, DO-214AC

SS12 Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionSMA, 2 PIN
Lead-freeYes
EU RoHS regulationsYes
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingMATTE Tin
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
CraftsmanshipSCHOTTKY
structuresingle
Diode component materialssilicon
Maximum power consumption limit1.1 W
Diode typeSignal diode
Maximum repetitive peak reverse voltage20 V
Maximum average forward current1 A
SS12 - SS110
1.0A Surface Mount Schottky Barrier Rectifiers
Features
·
·
·
·
·
·
·
High current capability
High surge current capability
High reliability
High efficiency
Low power loss
Low forward voltage drop
Low cost
·
Pb / RoHS Free
B
Dim
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
H
J
Mechanical Data
·
·
·
·
·
Case : SMA Molded plastic
Epoxy : UL94V-O rate flame retardant
Polarity : Color band denotes cathode end
Mounting position : Any
Weight : 0.060 gram (Approximately)
D
J
H
G
E
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Current
See Fig.1
SYMBOL SS12 SS13 SS14 SS15 SS16 SS18 SS19 SS110 UNIT
V
RRM
V
RMS
V
DC
I
F(AV)
I
FSM
20
14
20
30
21
30
40
28
40
50
35
50
1.0
60
42
60
80
56
80
90
63
90
100
70
100
V
V
V
A
Maximum Peak Forward Surge Current,
8.3ms single half sine wave superimposed
on rated load (JEDEC Method)
Maximum Forward Voltage at I
F
= 1.0 A
Maximum Reverse Current at
Rated DC Blocking Voltage
(1)
(2)
40
A
V
F
I
R
I
R(H)
R
θJL
T
J
T
STG
0.50
0.75
0.5
0.80
V
mA
Ta = 25
°C
Ta = 100
°C
10
35
- 65 to + 125
5.0
mA
°C/W
°C
°C
Typical Thermal Resistance
Operating Junction Temperature Range
Storage Temperature Range
Notes:
(1) Pulse Test : Pulse Width = 300
μs,
Duty Cycle = 2%.
- 65 to + 150
- 65 to + 150
(2) Mounted on P.C. Board with 5.0 mm
2
(0.013mm thick) copper pad areas.
1of2

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SS12 SS13 SS14 SS110 SS15 SS16 SS18 SS19
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