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UF1B

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA
Categorysemiconductor    Discrete semiconductor   
File Size130KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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UF1B Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AA

UF1A - UF1M
1.0A Surface Mount Ultra-Fast Rectifier
Features
·
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
·
·
·
·
·
·
For surface mounted applications
Ultra fast switching for high efficiency
Low reverse leakage
Built-in strain relief,ideal for automated placement
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds at terminals
B
Dim
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
H
J
Mechanical Data
·
Case:
JEDEC DO-214AC molded plastic body
·
Terminals
: Plated axial leads, solderable per MIL-STD-750,
Method 2026
·
Polarity:
Color band denotes cathode end
D
J
H
G
E
All Dimensions in mm
·
Mounting Position:
Any
·
Weight
:0.005 ounce, 0.138 grams
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
T
A
= 25°C unless otherwise specified
SYMBOLS
UF1A UF1B UF1D
UF1G UF1J
UF1K UF1M
UNITS
VOLTS
VOLTS
VOLTS
Amp
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
at T
L
=55 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current
T
A
=25 C
at rated DC blocking voltage
T
A
=100 C
Maximum reverse recovery time
(NOTE 1)
Typical junction capacitance (NOTE 2)
Typical thermal resistance (NOTE 3)
Operating junction and storage temperature range
V
RRM
V
RMS
V
DC
I
(AV)
50
35
50
100
70
100
200
140
200
400
280
400
1.0
600
420
600
800
560
800
1000
700
1000
I
FSM
V
F
I
R
t
rr
C
J
50
1.0
30.0
1.4
5.0
50.0
75
15.0
50.0
-65 to +150
1.7
Amps
Volts
u
A
ns
pF
C/W
C
R
q
JA
T
J
,
T
STG
Note:1.Reverse
recovery condition I
F
=0.5A,I
R
=1.0A,Irr=0.25A
2.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
3.P.C.B. mounted with 0.2x0.2”(5.0x5.0mm) copper pad areas
1of2

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UF1B UF1A UF1M UF1D UF1G UF1J
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