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UF2004

Description
2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15
Categorysemiconductor    Discrete semiconductor   
File Size70KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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UF2004 Overview

2 A, 400 V, SILICON, RECTIFIER DIODE, DO-15

UF2001 - UF2007
2.0A Axial Leaded Ultrafast Diode
Features
·
·
·
·
·
·
Diffused Junction
Ultra-Fast Switching for High Efficiency
High Current Capability and Low Forward
Voltage Drop
Surge Overload Rating to 60A Peak
Low Reverse Leakage Current
Plastic Material: UL Flammability
Classification Rating 94V-0
A
B
A
D
C
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Marking: Type Number
Weight: 0.4 grams (approx.)
Mounting Position: Any
Dim
A
B
C
D
DO-15
Min
25.40
5.50
0.686
2.60
Max
¾
7.62
0.889
3.60
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@ T
A
= 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 3)
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
Operating and Storage Temperature Range
@ I
F
= 2.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJA
T
j,
T
STG
UF
2001
50
35
@ T
A
= 25°C unless otherwise specified
UF
2002
100
70
UF
2003
200
140
UF
2004
400
280
2.0
60
UF
2005
600
420
UF
2006
800
560
UF
2007
1000
700
Unit
V
V
A
A
1.0
1.3
5.0
100
50
50
50
-65 to +150
1.7
V
mA
75
30
ns
pF
K/W
°C
Notes:
1. Valid provided that leads are maintained at ambient temperature at a distance of 9.5mm from the case.
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
3. Measured at I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A. See figure 5.
1 of 2

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