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US1B

Description
1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC
Categorysemiconductor    Discrete semiconductor   
File Size80KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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US1B Overview

1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC

US1B Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
stateDISCONTINUED
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
terminal coatingtin lead
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0500 us
Maximum repetitive peak reverse voltage100 V
Maximum average forward current1 A
US1A - US1M
1.0A Surface Mount Ultra-Fast Rectifier
Features
·
·
·
·
·
·
·
Glass Passivated Die Construction
Diffused Junction
Ultra-Fast Recovery Time for High Efficiency
Low Forward Voltage Drop, High Current
Capability, and Low Power Loss
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
Plastic Material: UL Flammability
Classification Rating 94V-0
B
Dim
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
H
J
Mechanical Data
·
·
·
·
·
·
Case: Molded Plastic
Terminals: Solder Plated Terminal - Solderable
per MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number
Weight: 0.064 grams (approx.)
Mounting Position: Any
D
J
H
G
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 75°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 2)
Typical Junction Capacitance (Note 1)
Typical Thermal Resistance, Junction to Terminal
Operating and Storage Temperature Range
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
j
R
qJT
T
j,
T
STG
US1A
50
35
T
A
= 25°C unless otherwise specified
US1B
100
70
US1D
200
140
US1G
400
280
1.0
30
US1J
600
420
US1K
800
560
US1M
1000
700
Unit
V
V
A
A
1.0
1.3
5.0
100
50
20
30
-65 to +150
1.7
V
mA
75
10
ns
pF
°C/W
°C
Notes:
1. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.
2. Measured with I
F
= 0.5A, I
R
= 1.0A, I
rr
= 0.25A.
1of2

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