US3A-US3M
3.0A Surface Mount Ultra-Fast Rectifier
Features
·
Plastic package has underwrites laboratory flammability
Classification 94V-0
·
Glass passivated chip junction
·
Built-in strain relief,
·
Fast switching speed for high efficiency
·
High temperature soldering guaranteed:
250 C/10 seconds
A
B
SMC
Dim
A
B
C
D
E
G
H
J
Min
5.59
6.60
2.75
0.15
7.75
0.10
0.76
2.00
Max
6.22
7.11
3.18
0.31
8.13
0.20
1.52
2.62
C
Mechanical Data
·
Case: JEDED DO-214AB transfer molded plastic
·
Terminals: Solder plated, solderable per
J
D
H
G
E
All Dimensions in mm
MIL-STD-750, method 2026
·
Polarity: Color band denotes cathode end
·
Weight: 0.007 ounce, 0.25 gram
Maximum Ratings
•
•
@ T
A
= 25°C unless otherwise specified
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load derate current by 20%.
SYMBOLS US3A
Maximum Repetitive Peak Reverse Voltage
V
RRM
50
Maximum RMS Voltage
V
RMS
35
Maximum DC Blocking Voltage
V
DC
50
Maximum Average Forward Rectified Current
At T
L
=105 (NOTE 1)
Peak Forward Surge Current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum Instantaneous Forward Voltage at 3.0A
Maximum DC Reverse Current
at rated DC Blocking Voltage at
T
A
= 25
T
A
= 125
US3B
100
70
100
US3D
200
140
200
US3G
400
280
400
3.0
100
US3J
600
420
600
US3K
800
560
800
US3M
1000
700
1000
UNIT
Volts
Volts
Volts
Amps
Amps
I
(AV)
I
FSM
V
F
I
R
t
rr
C
J
R
θJA
R
θJL
T
J
T
STG
50
80
1.0
1.3
10
200
1.7
Volts
A
Maximum Reverse Recovery Time
Test conditions I
F
=0.5A, I
R
=1.0A, I
RR
=0.25A
Typical Junction Capacitance
(Measured at 1.0MHz and applied reverse voltage of 4.0V)
Typical Thermal Resistance (Note 1)
Operating Junction Temperature
Storage Temperature Range
100
50
55
17
(-55 to +150)
(-55 to +150)
nS
pF
/W
Notes:
1. Thermal resistance from Junction to ambient and from junction to lead mounted on
P.C.B. with 0.3×0.3″(8.0
×
8.0mm) copper pad areas.
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FIG.1-TYPICAL FORWARD CURRENT
DERATING CURVE
AVERAGE FORWARD CURRENT,
(A)
3.0
FIG.2-MAXIMUM NON-REPETITIVE PEAK
FORWARD SURGE CURRENT
PEAK FORWARD SURGE
150
2.0
CURRENT, (A)
8.3ms Single Half Sine-Wave
(JEDEC Method) T
j
= T
jmax
100
1.0
Single Phase
Half Wave 60Hz
Resistive or
Inductive Load
0.375″(9.5mm) Lead Length
50
1 Cycle
0
0
25
50
75
100
125
150
175
0
1
2
4
6
8 10
20
40
60
100
AMBIENT TEMPERATURE, (° C)
FIG.3-TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
100
NUMBER OF CYCLES AT 60 Hz
FIG.4-TYPICAL REVERSE
CHARACTERISTICS
INSTANTANEOUS REVERSE CURRENT,
(μA)
100
INSTANTANEOUS FORWARD CURRENT,
/ 20
1 00
0 -4
00
V
10
0V
0V
60
30
00
V
5 0/
(A)
1.0
80
0V
-1
10
T
J
=100° C
1.0
0.1
T
J
=25℃
T
J
=25° C
Pulse Width=300us
1% Duty Cycle
0.01
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
0.1
0
20
40
60
80
100
120
140
INSTANTANEOUS FORWARD VOLTAGE,(V)
FIG.5-TYPICAL JUNCTION CAPACITANCE
1000
PERCENT OF RATED PEAK
REVERSE VOLTAGE,(%)
JUNCTION CAPACITANCE,(pF)
F1G.6-TEST CIRCUIT DIAGRAM AND
REVERSE RECOVERY TIME CHARACTERISTIC
Trr
50Ω
10Ω
NONINDUCTIVE NONINDUCTIVE
+0.5A
(-)
100
US
3A
-US
3G
(+)
25 Vdc
(approx.)
(-)
D.U.T.
PULSE
GENERATIOR
(NOTE 2)
(+)
OSCILLOSCOPE
(NOTE 1)
0
-0.25A
U S1
T
J
=25° C
f=1MHz
Vsig=50mVp-p
3 J -U
S 3M
1Ω
NON
INDUCTIVE
-1.0A
1cm
10
0.1
1.0
10
100
REVERSE VOLTAGE,(V)
NOTES : 1.Rise Time=7ns max. Input Impedance=
1 megohm. 22pF
2.Rise time=10ns max. Source Impedance=
50 ohms
SET TIME BASE FOR
50/100ns/cm
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Embedded System
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