BAT81S-BAT83S
150mA Surface Mount Small Signal Schottky Diodes
Features
·
Integrated protection ring against static
discharge
·
Low capacitance
·
Low leakage current
·
Low forward voltage drop
·
Very low switching time
·
Lead (Pb)-free component
·
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
B
A
D
DO-35
Dim
A
B
C
D
Min
25.40
¾
¾
¾
Max
¾
4.00
0.60
2.00
C
Mechanical Data
·
Case:
DO35 Glass case
·
Weight:
approx. 125 mg
·
Cathode Band Color:
black
·
Packaging Codes/Options:
TR/10 k per 13" reel (52 mm tape), 50 k/box
TAP/10 k per Ammopack (52 mm tape), 50 k/box
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Parameter
Reverse voltage
Test condition
Part
BAT81S
BAT82S
BAT83S
Forward continuous current
Peak forward surge current
Repetitive peak forward current
Parameter
Forward voltage
t
p
≤
10 ms
t
p
≤
1 s
Test condition
I
F
= 0.1 mA
I
F
= 1 mA
I
F
= 15 mA
Reverse current
Diode capacitance
V
R
= V
Rmax
V
R
= 1 V, f = 1 MHz
Symbol
V
F
V
F
V
F
I
R
C
D
Min
Symbol
V
R
V
R
V
R
I
F
I
FSM
I
FRM
Typ.
Value
40
50
60
30
500
150
Max
330
410
1000
200
1.6
Unit
V
V
V
mA
mA
mA
Unit
mV
mV
mV
nA
pF
1 of 2
P
R
- Reverse Power Dissipation (mW)
14
V
R
= 60
V
1000
I
F
- Forward Current (mA)
12
R
thJA
= 540 K/W
10
8
6
P
R
Limit
at 100
V
V
P
R
- Limit
at 100 %
%
R
R
4
P
R
- Limit at
80
%
V
R
2
0
25
50
75
100
125
150
100
T
j
= 125 °C
10
T
j
= 25 °C
1
0.1
0.01
0
15796
0.5
1
1.5
2.0
15794
T
j
- Junction Temperature (°C)
V
F
- Forward
Voltage
(V)
Figure 1. Max. Reverse Power Dissipation vs.
Junction Temperature
Figure 3. Forward Current vs. Forward Voltage
1000
2.0
V
R
=
V
RRM
C
D
- Diode Capacitance (pF)
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
f = 1 MHz
I
R
- Reverse Current (µA)
100
10
1
0.1
25
15795
0
50
75
100
125
150
15797
0.1
1
10
100
T
j
- Junction Temperature (°C)
V
R
- Reverse
Voltage
(V)
Figure 2. Reverse Current vs. Junction Temperature
Figure 4. Diode Capacitance vs. Reverse Voltage
2 of 2
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