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ES1A

Description
1 A, 50 V, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size75KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
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ES1A Overview

1 A, 50 V, SILICON, SIGNAL DIODE

ES1A Parametric

Parameter NameAttribute value
Number of terminals2
Number of components1
Processing package descriptionPlastic, SMA, 2 PIN
stateACTIVE
packaging shapeRectangle
Package SizeSMALL OUTLINE
surface mountYes
Terminal formC BEND
Terminal locationpair
Packaging MaterialsPlastic/Epoxy
structuresingle
Diode component materialssilicon
Diode typeSignal diode
Maximum reverse recovery time0.0200 us
Maximum repetitive peak reverse voltage50 V
Maximum average forward current1 A
ES1A - ES1G
1.0A Surface Mount Super-Fast Rectifier
Features
·
·
·
·
·
Glass Passivated Die Construction
Super-Fast Recovery Time For High Efficiency
Low Forward Voltage Drop and High Current Capability
Surge Overload Rating to 30A Peak
Ideally Suited for Automated Assembly
B
Dim
SMA
Min
2.29
4.00
1.27
0.15
4.80
0.10
0.76
2.01
Max
2.92
4.60
1.63
0.31
5.59
0.20
1.52
2.62
A
C
A
B
C
D
E
G
H
J
Mechanical Data
·
·
·
·
·
·
·
·
Case: Molded Plastic
Case Material - UL Flammability Rating
Classification 94V-0
Moisture sensitivity: Level 1 per J-STD-020A
Terminals: Solder Plated Terminal - Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band or Cathode Notch
Marking: Type Number & Date Code: See Below
Ordering Information: See Below
Weight: 0.064 grams (approx.)
D
J
H
G
E
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
@ T
T
= 110°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
Forward Voltage Drop
Peak Reverse Current
at Rated DC Blocking Voltage
Reverse Recovery Time (Note 1)
Typical Total Capacitance (Note 2)
Typical Thermal Resistance, Junction to Terminal (Note 3)
Operating and Storage Temperature Range
@ I
F
= 0.6A
@ I
F
= 1.0A
@ T
A
= 25°C
@ T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
I
FSM
V
FM
I
RM
t
rr
C
T
R
qJT
T
j,
T
STG
@ T
A
= 25°C unless otherwise specified
ES1A
50
35
ES1B
100
70
ES1C
150
105
1.0
30
0.90
0.98
5.0
200
20
10
40
-65 to +150
ES1D
200
140
ES1G
400
280
Unit
V
V
A
A
¾
1.25
V
mA
ns
pF
°C/W
°C
1of2

ES1A Related Products

ES1A ES1B ES1C ES1G ES1D
Description 1 A, 50 V, SILICON, SIGNAL DIODE 1 A, 100 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 150 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 400 V, SILICON, SIGNAL DIODE, DO-214AC 1 A, 200 V, SILICON, SIGNAL DIODE
Number of terminals 2 2 2 2 2
Number of components 1 1 1 1 1
Processing package description Plastic, SMA, 2 PIN GREEN, PLASTIC, SMA, 2 PIN SMA, 2 PIN Plastic, HSMA, 2 PIN Plastic, SMA, 2 PIN
state ACTIVE ACTIVE ACTIVE DISCONTINUED ACTIVE
packaging shape Rectangle Rectangle RECTANGULAR Rectangle Rectangle
Package Size SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
surface mount Yes Yes Yes Yes Yes
Terminal form C BEND C BEND C BEND C BEND C BEND
Terminal location pair pair DUAL pair pair
Packaging Materials Plastic/Epoxy Plastic/Epoxy PLASTIC/EPOXY Plastic/Epoxy Plastic/Epoxy
structure single single SINGLE single single
Diode component materials silicon silicon SILICON silicon silicon
Diode type Signal diode Signal diode SIGNAL DIODE Signal diode Signal diode
Maximum reverse recovery time 0.0200 us 0.0350 us 0.0150 us 0.0600 us 0.0200 us
Maximum repetitive peak reverse voltage 50 V 100 V 150 V 400 V 200 V
Maximum average forward current 1 A 1 A 1 A 1 A 1 A
terminal coating - PURE Tin MATTE TIN tin lead PURE Tin
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