SILICON TRANSISTOR
NPN SILICON HIGH
FREQUENCY TRANSISTOR
FEATURES
•
•
•
•
SMALL PACKAGE STYLE:
2 NE680 Die in a 2 mm x 1.25 mm package
LOW NOISE FIGURE:
NF = 1.9 dB TYP at 2 GHz
UPA811T
OUTLINE DIMENSIONS
(Units in mm)
PACKAGE OUTLINE S06
(Top View)
2.1
±
0.1
1.25
±
0.1
EXCELLENT LOW VOLTAGE, LOW CURRENT
PERFORMANCE
2.0
±
0.2
1.3
HIGH GAIN:
|S
21E
|
2
= 7.5 dB TYP at 2 GHz
The UPA811T is two NPN high frequency silicon epitaxial
transistors encapsulated in an ultra small 6 pin SMT package.
Each transistor is independently mounted and easily config-
ured for either dual transistor or cascode operation. The high
f
T
, low voltage bias and small size make this device ideally
suited for pager and other hand-held wireless applications.
DESCRIPTION
0.65
1
6
5
0.2 (All Leads)
2
3
4
ABSOLUTE MAXIMUM RATINGS
1
(T
A
= 25°C)
SYMBOLS
V
CBO
V
CEO
V
EBO
I
C
P
T
T
J
T
STG
PARAMETERS
UNITS
V
V
V
mA
mW
mW
°C
°C
RATINGS
20
10
1.5
35
110
200
150
-65 to +150
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current
Total Power Dissipation
1 Die
2 Die
Junction Temperature
Storage Temperature
0.9
±
0.1
0.7
0 ~ 0.1
0.15
- 0.05
+0.10
PIN OUT
1. Collector Transistor 1
2. Base Transistor 2
3. Collector Transistor 2
4. Emitter Transistor 2
5. Emitter Transistor 1
6. Base Transistor 1
Note:
Pin 3 is identified with a circle on the bottom of the package.
Note:
1. Operation in excess of any one of these parameters may result
in permanent damage.
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C)
PART NUMBER
PACKAGE OUTLINE
SYMBOLS
I
CBO
I
EBO
f
T
Collector Cutoff Current at V
CB
= 10 V, I
E
= 0
Emitter Cutoff Current at V
EB
= 1 V, I
C
= 0
Forward Current Gain at V
CE
= 3 V, I
C
= 5 mA
Gain Bandwidth at V
CE
= 3 V, I
C
= 5 mA
Feedback Capacitance at V
CB
= 3 V, I
E
= 0, f = 1 MHz
Insertion Power Gain at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
Noise Figure at V
CE
= 3 V, I
C
= 5 mA, f = 2 GHz
GHz
pF
dB
dB
5.5
PARAMETERS AND CONDITIONS
UNITS
μ
A
μ
A
80
5.5
120
8.0
0.3
7.5
1.9
3.2
0.7
MIN
UPA811T
S06
TYP
MAX
1.0
1.0
200
h
FE1
Cre
2
NF
|S
21E
|
2
Notes:
1.Pulsed measurement, pulse width
≤
350
μs,
duty cycle
≤
2 %.
2.The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge.
For Tape and Reel version use part number UPA811T-T1, 3K per reel.
UPA811T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
TOTAL POWER DISSIPATION vs.
AMBIENT TEMPERATURE
25
COLLECTOR CURRENT vs.
COLLECTOR TO EMITTER VOLTAGE
160
µA
Total Power Dissipation, P
T
(mW)
Free Air
200
El
Collector Current, I
C
(mA)
2
em
20
140
µA
120
µA
en
ts
Pe
in
rE
lem
To
t
al
15
en
100
µA
80
µA
t
100
10
60
µA
40
µA
5
l
B
=20
µA
0
50
100
150
0
0.5
1.0
Ambient Temperature, T
A
(°C)
Collector to Emitter Voltage, V
CE
(V)
COLLECTOR CURRENT vs.
BASE TO EMITTER VOLTAGE
20
V
CE
= 3 V
200
DC CURRENT GAIN vs.
COLLECTOR CURRENT
V
CE
= 3 V
Collector Current, I
C
(mA)
DC Current Gain, h
FE
0.5
1.0
100
50
10
20
10
0
0.5
1
5
10
50
Base to Emitter Voltage, V
BE
(V)
Collector Current, I
C
(mA)
FEEDBACK CAPACITANCE vs.
COLLECTOR TO BASE VOLTAGE
5.0
GAIN BANDWIDTH PRODUCT vs.
COLLECTOR CURRENT
10
Gain Bandwidth Product, f
T
(GHz)
f = 1 MHz
Feddback Capacitance, C
RE
(pF)
VCE = 3 V
f = 2 GHz
8
2.0
1.0
6
0.5
4
0.2
2
0.1
1
2
5
10
20
50
0
0.5
1
5
10
50
Collector to Base Voltage, V
CB
(V)
Collector Current, I
C
(mA)
UPA811T
TYPICAL PERFORMANCE CURVES
(T
A
= 25°C)
INSERTION POWER GAIN vs.
COLLECTOR CURRENT
12
INSERTION POWER GAIN vs.
FREQUENCY
25
Insertion Power Gain, IS
21e
I
2
(dB)
Insertion Power Gain, IS
21e
I
2
(dB)
VCE = 3 V
f = 2 GHz
V
CE
= 3 V
lc = 5 mA
20
8
15
4
10
5
0
0.
5
1
5
10
5
0
0
0.1
0.
2
0.5
1.0
2
.0
5
.0
Collector Current, l
C
(mA)
Frequency, f (GHz)
NOISE FIGURE vs.
COLLECTOR CURRENT
5
V
CE
= 3 V
f = 2 GHz
Noise Figure, NF (dB)
4
3
2
1
0
0.
5
1
5
10
5
0
Collector Current, l
C
(mA)
ORDERING INFORMATION
PART NUMBER
UPA811T-T1-A
QUANTITY
3000
PACKAGING
Tape & Reel
CALIFORNIA EASTERN LABORATORIES
• Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
PRINTED IN USA ON RECYCLED PAPER -1/99
DATA SUBJECT TO CHANGE WITHOUT NOTICE
EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
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