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10A6

Description
10 A, 600 V, SILICON, RECTIFIER DIODE
Categorysemiconductor    Discrete semiconductor   
File Size89KB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
Download Datasheet Compare View All

10A6 Overview

10 A, 600 V, SILICON, RECTIFIER DIODE

10A05 – 10A10
10A Axial Leaded Standard Diode
Features
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Diffused Junction
Low Forward Voltage Drop
High Current Capability
High Reliability
High Surge Current Capability
A
B
A
Mechanical Data
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Case: P-600, Molded Plastic
Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
Polarity: Cathode Band
Weight: 2.1 grams (approx.)
Mounting Position: Any
Marking: Type Number
Lead Free: For RoHS / Lead Free Version,
Add “-LF” Suffix to Part Number, See Page 4
D
C
R-6
Dim
Min
Max
25.4
A
8.60
9.10
B
1.20
1.30
C
8.60
9.10
D
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
@T
A
=25°C unless otherwise specified
Characteristic
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current
(Note 1)
@T
A
= 50°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave superimposed on
rated load (JEDEC Method)
Forward Voltage
Peak Reverse Current
At Rated DC Blocking Voltage
@I
F
= 10A
@T
A
= 25°C
@T
A
= 100°C
Symbol
V
RRM
V
RWM
V
R
V
R(RMS)
I
O
10A05
10A1
10A2
10A4
10A6
10A8
10A10
Unit
50
35
100
70
200
140
400
280
10
600
420
800
560
1000
700
V
V
A
I
FSM
V
FM
I
RM
C
j
R
JA
T
j
T
STG
150
600
1.0
10
100
80
10
-50 to +150
-50 to +150
A
V
µA
pF
°C/W
°C
°C
Typical Junction Capacitance (Note 2)
Typical Thermal Resistance Junction to Ambient
(Note 1)
Operating Temperature Range
Storage Temperature Range
Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case
2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
1of2

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10A6 10A05 10A1 10A10 10A8 10A2 10A4
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