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1SS190

Description
0.1 A, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size2MB,2 Pages
ManufacturerSUNMATE
Websitehttp://www.sunmate.tw/
Download Datasheet View All

1SS190 Overview

0.1 A, SILICON, SIGNAL DIODE

1SS190
100mA Surface Mount Switching Diode
Features
A
·
Low forward voltage
V
F(3)
=0.92V(typ).
·
Fast switching.
·
Fast reverse recovery time:t
rr
=1.6ns(typ)
K
G
H
B C
M
Mechanical Data
·
Case: SOT-23
J
D
F
L
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
F
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
α
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
Characteristic
Non-Repetitive Peak Reverse Voltage
DC Reverse Voltage
Forward Continuous Current(max)
Forward Output current
Power Dissipation
Operating Junction Temperature Range
Storage Temperature Range
Characteristic
Reverse Breakdown Voltage
Symbol
V
(BR)R
Min
80
@ T
A
= 25°C unless otherwise specified
Symbol
V
RM
V
R
I
FM
I
o
P
d
T
j
T
STG
Typ
-
0.61
MAX
-
Limits
85
80
300
100
150
125
-55 to +125
UNIT
V
Unit
V
V
mA
mA
mW
Test Condition
I
R
= 100μA
I
F
=1mA
I
F
=10mA
I
F
=100mA
V
R
=30V
V
R
=80V
V
R
=0V,f=1.0MHz
I
F
=I
R
=10mAI
rr
=0.1*I
R
Forward Voltage
V
F
-
0.74
0.92
1.2
0.1
0.5
2.2
1.6
1 of 2
V
Reverse Leakage Current
Junction Capacitance
Reverse Recovery Time
I
R
C
j
t
rr
-
-
-
μA
pF
ns
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