BAS19-V—BAS21-V
200mA Surface Mount Small Signal Switching Diode
Features
·
Silicon Epitaxial Planar Diode
·
Fast switching diode in case SOT-23,
especially suited for automatic insertion.
·
These diodes are also available in other
case styles including:the SOD-123 case with the
type designations BAV19W-V to BAV21W-V, the
Mini-MELF case with the type designation
BAV101 to BAV103, the DO-35 case with the type
designations BAV19-V to BAV21-V and the SOD-
323 case with type designation BAV19WS-V to
BAV21WS-V.
·
Lead (Pb)-free component
·
Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
A
B C
G
H
K
M
J
D
F
L
Mechanical Data
·
Case:
SOT-23 Plastic case
·
Weight:
approx. 8.8 mg
·
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
SOT-23
Dim
Min
Max
A
0.37
0.51
B
1.20
1.40
C
2.30
2.50
D
0.89
1.03
F
0.45
0.60
G
1.78
2.05
H
2.80
3.00
J
0.013
0.10
K
0.903
1.10
L
0.45
0.61
M
0.085
0.180
0°
8°
α
All Dimensions in mm
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Parameter
Continuous reverse voltage
Test condition
Part
BAS19-V
BAS20-V
BAS21-V
Repetitive peak reverse voltage
BAS19-V
BAS20-V
BAS21-V
Non-repetitive peak forward
current
Non-repetitive peak forward
surge current
Maximum average forward
rectified current
DC forward current
Repetitive peak forward current
Power dissipation
Parameter
Forward voltage
Leakage current
Dynamic forward resistance
Diode capacitance
Reverse recovery time
T
amb
= 25 °C
Test condition
I
F
= 100 mA
I
F
= 200 mA
V
R
= V
Rmax
V
R
= V
Rmax
, T
j
= 150 °C
I
F
= 10 mA
V
R
= 0, f = 1 MHz
I
F
= I
R
= 30 mA, R
L
= 100
Ω,
I
rr
= 3 mA
Symbol
V
F
V
F
I
R
I
R
r
f
C
tot
t
rr
5
5
50
Min
t = 1
µs
t=1s
(av. over any 20 ms period)
T
amb
= 25 °C
Symbol
V
R
V
R
V
R
V
RRM
V
RRM
V
RRM
I
FSM
I
FSM
I
F(AV)
I
F
I
FRM
P
tot
Typ.
Value
100
150
200
120
200
250
2.5
0.5
200
1)
200
2)
625
250
2)
Max
1.0
1.25
100
100
Unit
V
V
V
V
V
V
A
A
mA
mA
mA
mW
Unit
V
V
nA
µA
Ω
pF
ns
Embedded System
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