SMD Type
Zener Diodes
BZT55B2V4 ~ BZT55B75
LL-34
■
Features
●
Very sharp reverse characteristic
●
Low reverse current level
●
Very high stability
●
Low noise
2.64REF
0.50
0.35
Diodes
Unit: mm
1.50
1.30
3.60
3.30
CATHODE BAND
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Forward voltage @ I
F
=200mA
Zener current
Power Dissipation @ R
θJA
≤300 ℃/W
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
F
I
Z
P
D
R
θJA
T
J
T
stg
Rating
1.5
Pv/Vz
500
500
175
-65 to 175
Unit
V
mA
mW
℃/W
℃
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1
SMD Type
Zener Diodes
BZT55B2V4 ~ BZT55B75
■
Electrical Characteristics Ta = 25℃
ZENER VOLTAGE
RANGE
(1)
PART NUMBER
V
Z
at I
ZT1
V
MIN.
BZT55B2V4
BZT55B2V7
BZT55B3V0
BZT55B3V3
BZT55B3V6
BZT55B3V9
BZT55B4V3
BZT55B4V7
BZT55B5V1
BZT55B5V6
BZT55B6V2
BZT55B6V8
BZT55B7V5
BZT55B8V2
BZT55B9V1
BZT55B10
BZT55B11
BZT55B12
BZT55B13
BZT55B15
BZT55B16
BZT55B18
BZT55B20
BZT55B22
BZT55B24
BZT55B27
BZT55B30
BZT55B33
BZT55B36
BZT55B39
BZT55B43
BZT55B47
BZT55B51
BZT55B56
BZT55B62
BZT55B68
BZT55B75
2.35
2.64
2.94
3.24
3.52
3.82
4.22
4.6
5
5.48
6.08
6.66
7.35
8.04
8.92
9.8
10.78
11.76
12.74
14.7
15.7
17.64
19.6
21.55
23.5
26.4
29.4
32.4
35.3
38.2
42.1
46.1
50
54.9
60.8
66.6
73.5
NOM.
2.4
2.7
3.0
3.3
3.6
3.9
4.3
4.7
5.1
5.6
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
62
68
75
MAX.
2.45
2.76
3.06
3.36
3.68
3.98
4.38
4.8
5.2
5.72
6.32
6.94
7.65
8.36
9.28
10.2
11.22
12.24
13.26
15.3
16.3
18.36
20.4
22.45
24.5
27.6
30.6
33.6
36.7
39.8
43.9
47.9
52
57.1
63.2
69.4
76.5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
1
0.5
0.5
0.5
0.5
0.5
0.5
0.5
< 50
< 10
<4
<2
<2
<2
<1
< 0.5
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 0.1
< 100
< 50
< 40
< 40
< 40
< 40
< 20
< 10
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<2
<5
<5
<5
< 10
< 10
< 10
< 10
< 10
1
1
1
1
1
1
1
1
1
1
2
3
5
6.2
6.8
7.5
8.2
9.1
10
11
12
13
15
16
18
20
22
24
27
30
33
36
39
43
47
51
56
TEST
CURRENT
I
ZT1
mA
I
ZT2
REVERSE LEAKAGE
CURRENT
I
R
at V
R
T
amb
=
25 °C
T
amb
=
150 °C
µA
V
MAX.
< 85
< 85
< 90
< 90
< 90
< 90
< 90
< 80
< 60
< 40
< 10
<8
<7
<7
< 10
< 15
< 20
< 20
< 26
< 30
< 40
< 50
< 55
< 55
< 80
< 80
< 80
< 80
< 80
< 90
< 90
< 110
< 125
< 135
< 150
< 200
< 250
DYNAMIC
RESISTANCE
Z
Z
at I
ZT1
Z
ZK
at I
ZT2
f = 1 kHz
Ω
MAX.
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 600
< 550
< 450
< 200
< 150
< 50
< 50
< 50
< 70
< 70
< 90
< 110
< 110
< 170
< 170
< 220
< 220
< 220
< 220
< 220
< 220
< 220
< 500
< 600
< 700
< 700
< 1000
< 1000
< 1000
< 1500
Diodes
TEMPERATURE
COEFFICIENT
TK
VZ
%/K
MIN.
- 0.09
- 0.09
- 0.08
- 0.08
- 0.08
- 0.08
- 0.06
- 0.05
- 0.02
- 0.05
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.03
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
0.04
MAX.
- 0.06
- 0.06
- 0.05
- 0.05
- 0.05
- 0.05
- 0.03
0.02
0.02
0.05
0.06
0.07
0.07
0.08
0.09
0.1
0.11
0.11
0.11
0.11
0.11
0.11
0.11
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
0.12
Notes
•
Additional measurement of volt age group 9V1 to 75 at 95 % V
zmin.
≤35
nA at T
j
25 °C
(1)
t
≤
10 ms, T/t > 1000
p
p
2
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SMD Type
Zener Diodes
BZT55B2V4 ~ BZT55B75
■
Typical Characterisitics
P
tot
- Total Power Dissipation (mW)
600
500
400
300
200
100
0
0
200
80
120
160
40
T
amb
- Ambient Temperature (°C)
TK
VZ
- Temperature Coefficient
of V
Z
(10
-4
/K)
15
Diodes
10
5
I
Z
= 5 mA
0
- 5
0
10
20
30
40
50
V
Z
- Z-Voltage (V)
Fig. 4 - Temperature Coefficient of V
Z
vs. Z-Voltage
200
Fig. 1 - Total Power Dissipation vs. Ambient Temperature
1000
T
j
= 25 °C
100
C
D
- Diode Capacitance (pF)
V
Z
- Voltage Change (mV)
150
V
R
= 2 V
100
T
j
= 25 °C
I
Z
= 5 mA
10
50
1
0
5
10
15
20
0
25
0
5
10
15
20
25
V
Z
- Z-Voltage (V)
Fig. 2 - Typical Change of Working Voltage under Operating
Conditions at T
amb
=25°C
1.3
V
Z
- Z-Voltage (V)
Fig. 5 - Diode Capacitance vs. Z-Voltage
100
V
Ztn
- Relative Voltage Change
V
Ztn
= V
Zt
/V
Z
(25 °C)
I
F
- Forward Current (mA)
1.2
TK
VZ
= 10 x 10
-4
/K
8 x 10
-4
/K
6 x 10
-4
/K
4 x 10
-4
/K
2 x 10
-4
/K
10
1.1
1
T
j
= 25 ° C
1.0
0.9
0
- 2 x 10 /K
-4
0.1
- 4 x 10
-4
/K
0.01
0.8
- 60
0
60
120
180
240
0.001
0
0.2
0.4
0.6
0.8
1.0
T
j
- Junction Temperature (°C)
Fig. 3 - Typical Change of Working Voltage vs. Junction
Temperature
V
F
- Forward Voltage (V)
Fig. 6 - Forward Current vs. Forward Voltage
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3
SMD Type
Zener Diodes
BZT55B2V4 ~ BZT55B75
■
Typical Characterisitics
100
80
1000
Diodes
r
Z
- Differential Z-Resistance (Ω)
I
Z
- Z-Current (mA)
60
P
tot
= 500 mW
T
amb
= 25 °C
I
Z
= 1 mA
100
5 mA
10
10 mA
40
20
0
0
4
6
8
12
20
1
0
5
10
15
T
j
= 25 °C
20
25
V
Z
- Z-Voltage (V)
Fig. 7 - Z-Current vs. Z-Voltage
50
P
tot
= 500 mW
T
amb
= 25 °C
V
Z
- Z-Voltage (V)
Fig. 9 - Differential Z-Resistance vs. Z-Voltage
40
I
Z
- Z-Current (mA)
30
20
10
0
15
20
25
30
.
35
V
Z
- Z-Voltage (V)
Fig. 8 - Z-Current vs. Z-Voltage
Z
thp
- Thermal Resistance for Pulse Cond. (KW)
1000
t
p
/T = 0.5
100
t
p
/T = 0.2
Single Pulse
R
thJA
= 300 K/W
T = T
jmax
- T
amb
10
t
p
/T = 0.1
t
p
/T = 0.02
t
p
/T = 0.05
t
p
/T = 0.01
i
ZM
= (-
V
Z
+ (V
Z2
+ 4r
zj
x T/Z
thp
)
1/2
)/(2r
zj
)
1
10
-1
10
0
10
1
t
p
- Pulse Length (ms)
10
2
Fig. 10 - Thermal Response
4
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