DIP Type
Zener Diodes
BZX55C2V4 ~ BZX55C75
(KZX55C2V4 ~ KZX55C75)
DO-35
Diodes
■
Features
●
Very Sharp Reverse Characteristic
●
Low Reverse Current Level
●
Very High Stability
●
Low Noise
0.079(2.0)
MAX
1.0 2(26.0)
MIN.
0.157 (4.0)
MAX
1.0 2(26.0)
MIN.
0.024(0.60)
MAX
Dimensions in inches and (millimeters)
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Forward Voltage @ I
F
=200mA
Zener Current
Power Dissipation T
L
= 25°C
Thermal Resistance Junction to Ambient
Junction Temperature
Storage Temperature range
Symbol
V
F
I
Z
P
D
R
θJA
T
J
T
stg
Rating
1.5
Pd/Vz
500
300
175
-65 to 175
Unit
V
mA
mW
℃/W
℃
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DIP Type
Zener Diodes
BZX55C2V4 ~ BZX55C75
(KZX55C2V4 ~ KZX55C75)
R
qJA
, THERMAL RESISTANCE JUNCTION TO AMBIENT (K/W)
Diodes
■
Typical Characterisitics
500
500
P
d
, TOTAL POWER DISSIPATION (mW)
400
400
300
300
200
200
100
100
0
0
40
80
120
160
200
T
A
, AMBIENT TEMPERATURE
Fig.1, Power Dissipation vs Ambient Temperature
0
0
5
10
15
20
l, LEAD LENGTH (mm)
Fig. 2, Thermal Resistance vs Lead Length
200
150
DIFFERENTIAL ZENER RESISTANCE (W)
V
R
= 2V
T
j
= 25C
1000
T
j
= 25°
C
C
j
, DIODE CAPACITANCE (pF)
I = 1m A
Z
100
100
5m A
10
10m A
50
0
0
10
15
20
25
V
Z
, ZENER VOLTAGE (V)
Fig. 3, Diode Capacitance vs Zener Voltage
5
1
0
5
10
15
20
25
V
Z
, ZENER VOLTAGE (V)
Fig. 4, Differential Zener Impedance
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