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LY6112816ML-20E

Description
SRAM,
Categorystorage    storage   
File Size162KB,13 Pages
ManufacturerLyontek
Websitehttp://www.lyontek.com.tw/index.html
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LY6112816ML-20E Overview

SRAM,

LY6112816ML-20E Parametric

Parameter NameAttribute value
MakerLyontek
package instructionTSOP2-44
Reach Compliance Codecompliant
Maximum access time20 ns
JESD-30 codeR-PDSO-G44
length18.415 mm
memory density2097152 bit
Memory IC TypeSTANDARD SRAM
memory width16
Number of functions1
Number of terminals44
word count131072 words
character code128000
Operating modeASYNCHRONOUS
Maximum operating temperature80 °C
Minimum operating temperature-20 °C
organize128KX16
Package body materialPLASTIC/EPOXY
encapsulated codeTSOP2
Package shapeRECTANGULAR
Package formSMALL OUTLINE, THIN PROFILE
Parallel/SerialPARALLEL
Maximum seat height1.2 mm
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelCOMMERCIAL EXTENDED
Terminal formGULL WING
Terminal pitch0.8 mm
Terminal locationDUAL
width10.16 mm

LY6112816ML-20E Preview

®
LY6112816
Rev. 1.2
5V 128K X 16 BIT HIGH SPEED CMOS SRAM
REVISION HISTORY
Revision
Rev. 1.0
Rev. 1.1
Description
Initial Issue
Revised Test Condition of I
CC
Revised
FEATURES
&
ORDERING INFORMATION
Lead free and green package available
to
Green package
available
Deleted T
SOLDER
in
ABSOLUTE MAXIMUN RATINGS
Added packing type in
ORDERING INFORMATION
Revised
ORDERING INFORMATION
in page 11
Issue Date
Aug.12.2007
Apr. 17.2009
Rev.1.2
Aug.25.2010
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
0
®
LY6112816
Rev. 1.2
5V 128K X 16 BIT HIGH SPEED CMOS SRAM
GENERAL DESCRIPTION
The LY6112816 is a 2,097,152-bit low power CMOS
static random access memory organized as 131,072
words by 16 bits. It is fabricated using very high
performance, high reliability CMOS technology. Its
standby current is stable within the range of
operating temperature.
The LY6112816 is well designed for low power
application, and particularly well suited for battery
back-up nonvolatile memory application.
The LY6112816 operates from a single power
supply of 5V and all inputs and outputs are fully TTL
compatible
FEATURES
Fast access time : 15/20ns
Low power consumption:
Operating current : 140/110mA(MAX.)
Standby current :
3mA(MAX. for 15/20ns)
100µA( (MAX. for 15/20ns LL version)
Single 5V power supply
All outputs TTL compatible
Fully static operation
Tri-state output
Data byte control : LB# (DQ0 ~ DQ7)
UB# (DQ8 ~ DQ15)
Data retention voltage : 2.0V (MIN.)
Green package available
Package : 44-pin 400 mil TSOP-II
PRODUCT FAMILY
Product
Family
LY6112816
LY6112816(E)
LY6112816(I)
LY6112816(LL)
LY6112816(LLE)
LY6112816(LLI)
Operating
Temperature
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
0 ~ 70℃
-20 ~ 80℃
-40 ~ 85℃
Vcc
Range
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
4.5 ~ 5.5V
Speed
15/20ns
15/20ns
15/20ns
15/20ns
15/20ns
15/20ns
Power Dissipation
Standby(I
SB1
)
Operating(Icc)
3mA(MAX.)
140/110mA(MAX.)
3mA(MAX.)
140/110mA(MAX.)
3mA(MAX.)
140/110mA(MAX.)
100µA(MAX.)
140/110mA(MAX.)
100µA(MAX.)
140/110mA(MAX.)
100µA(MAX.)
140/110mA(MAX.)
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
1
®
LY6112816
Rev. 1.2
5V 128K X 16 BIT HIGH SPEED CMOS SRAM
FUNCTIONAL BLOCK DIAGRAM
PIN DESCRIPTION
Vcc
Vss
SYMBOL
A0 - A16
128Kx16
MEMORY ARRAY
DESCRIPTION
Address Inputs
Chip Enable Input
Write Enable Input
Output Enable Input
Lower Byte Control
Upper Byte Control
Power Supply
Ground
A0-A16
DECODER
DQ0 – DQ15 Data Inputs/Outputs
CE#
WE#
OE#
LB#
UB#
DQ0-DQ7
Lower Byte
DQ8-DQ15
Upper Byte
I/O DATA
CIRCUIT
COLUMN I/O
V
CC
V
SS
CE#
WE#
OE#
LB#
UB#
CONTROL
CIRCUIT
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
2
®
LY6112816
Rev. 1.2
5V 128K X 16 BIT HIGH SPEED CMOS SRAM
PIN CONFIGURATION
A4
A3
A2
A1
A0
CE#
DQ0
DQ1
DQ2
DQ3
Vcc
Vss
DQ4
DQ5
DQ6
DQ7
WE#
A16
A15
A14
A13
A12
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
TSOP II
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
24
23
A5
A6
A7
OE#
UB#
LB#
DQ15
DQ14
DQ13
DQ12
Vss
Vcc
DQ11
DQ10
DQ9
DQ8
NC
A8
A9
A10
A11
NC
ABSOLUTE MAXIMUN RATINGS*
PARAMETER
Voltage on V
CC
relative to V
SS
Voltage on any other pin relative to V
SS
Operating Temperature
Storage Temperature
Power Dissipation
DC Output Current
SYMBOL
V
T1
V
T2
T
A
T
STG
P
D
I
OUT
RATING
-0.5 to 6.5
-0.5 to V
CC
+0.5
0 to 70(C grade)
-20 to 80(E grade)
-40 to 85(I grade)
-65 to 150
1
50
UNIT
V
V
W
mA
*Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. This is a stress
rating only and functional operation of the device or any other conditions above those indicated in the operational sections of this
specification is not implied. Exposure to the absolute maximum rating conditions for extended period may affect device reliability.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
LY6112816
3
®
LY6112816
Rev. 1.2
5V 128K X 16 BIT HIGH SPEED CMOS SRAM
TRUTH TABLE
MODE
Standby
Output Disable
Read
CE#
H
L
L
L
L
L
L
L
L
OE#
X
H
X
L
L
L
X
X
X
WE# LB#
X
H
X
H
H
H
L
L
L
X
X
H
L
H
L
L
H
L
UB#
X
X
H
H
L
L
H
L
L
I/O OPERATION
DQ0-DQ7
DQ8-DQ15
High – Z
High – Z
High – Z
High – Z
High – Z
High – Z
D
OUT
High – Z
D
OUT
High – Z
D
OUT
D
OUT
D
IN
High – Z
D
IN
High – Z
D
IN
D
IN
SUPPLY CURRENT
I
SB1
I
CC
I
CC
Write
Note:
I
CC
H = V
IH
, L = V
IL
, X = Don't care.
DC ELECTRICAL CHARACTERISTICS
SYMBOL
TEST CONDITION
MIN.
TYP.
PARAMETER
Supply Voltage
V
CC
4.5
5.0
*1
Input High Voltage
V
IH
0.6*Vcc
-
*2
Input Low Voltage
V
IL
- 0.3
-
Input Leakage Current
I
LI
V
CC
V
IN
V
SS
-1
-
Output Leakage
V
CC
V
OUT
V
SS
,
I
LO
-1
-
Current
Output Disabled
Output High Voltage
V
OH
I
OH
= -4mA
2.4
-
Output Low Voltage
V
OL
I
OL
= 8mA
-
-
Cycle time = Min.
15
-
100
Average Operating
I
CC
CE# = V
IL
, I
I/O
= 0mA
Power supply Current
20
-
80
Others at V
IL
or V
IH
15/20
-
0.1
Standby Power
CE#
V
CC
- 0.2V
I
SB1
Supply Current
Others at 0.2V or V
CC
-0.2V 15/20LL
-
20
Notes:
1. V
IH
(max) = V
CC
+ 3.0V for pulse width less than 10ns.
2. V
IL
(min) = V
SS
- 3.0V for pulse width less than 10ns.
3. Over/Undershoot specifications are characterized, not 100% tested.
4. Typical values are included for reference only and are not guaranteed or tested.
Typical valued are measured at V
CC
= V
CC
(TYP.) and T
A
= 25℃
5. 1mA for special request
6. 50µA for special request
*4
MAX.
5.5
V
CC
+0.3
0.8
1
1
-
0.4
140
110
3*
6
100*
5
UNIT
V
V
V
µA
µA
V
V
mA
mA
mA
µA
CAPACITANCE
(T
A
= 25
, f = 1.0MHz)
PARAMETER
Input Capacitance
Input/Output Capacitance
SYMBOL
C
IN
C
I/O
MIN.
-
-
MAX
8
10
UNIT
pF
pF
Note : These parameters are guaranteed by device characterization, but not production tested.
Lyontek Inc.
reserves the rights to change the specifications and products without notice.
5F, No. 2, Industry E. Rd. IX, Science-Based Industrial Park, Hsinchu 300, Taiwan.
TEL: 886-3-6668838
FAX: 886-3-6668836
4

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Description SRAM, SRAM,
Reach Compliance Code compliant compliant

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