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RJK0655DPB_15

Description
60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching
File Size148KB,7 Pages
ManufacturerRenesas Electronics Corporation
Websitehttps://www.renesas.com/
Download Datasheet View All

RJK0655DPB_15 Overview

60V, 35A, 6.7m max. Silicon N Channel Power MOS FET Power Switching

Preliminary
Datasheet
RJK0655DPB
60V, 35A, 6.7m max.
Silicon N Channel Power MOS FET
Power Switching
Features
High speed switching
Low drive current
Low on-resistance
R
DS(on)
= 5.3 m
typ. (at V
GS
= 10 V)
Pb-free
Halogen-free
High density mounting
R07DS1053EJ0200
(Previous: REJ03G1881-0100)
Rev.2.00
Apr 09, 2013
Outline
RENESAS Package code: PTZZ0005DA-A
(Package name: LFPAK)
5
D
5
4
G
3
12
4
1, 2, 3
4
5
Source
Gate
Drain
S S S
1 2 3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Body-drain diode reverse drain current
Avalanche current
Avalanche energy
Channel dissipation
Channel to Case Thermal Resistance
Channel temperature
Storage temperature
Notes: 1. PW
10
s,
duty cycle
1%
2. Value at L=10uH, Tch = 25C, Rg
50
3. Tc = 25C
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)Note1
I
DR
I
AP
E
AS Note 2
Pch
Note3
ch-C
Tch
Tstg
Note 2
Ratings
60
20
35
140
35
35
9.2
60
2.08
150
–55 to +150
Unit
V
V
A
A
A
A
mJ
W
C/W
C
C
R07DS1053EJ0200 Rev.2.00
Apr 09, 2013
Page 1 of 6
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