DATA SHEET
SEMICONDUCTOR
SB1020F~SB10150F
10A SCHOTTKY BARRIER RECTIFIER
FEATURES
•
Schottky Barrier Chip
•High
Current Capability, Low Forward
•Low
Reverse Leakage Current
•High
Surge Current Capability
•Plastic
Material has UL Flammability
Classification 94V-O
•
High temperature soldering : 260
O
C / 10 seconds at terminals
•
Pb free product at available : 99% Sn above meet RoHS
environment substance directive request
.138(3.50)
ITO-220AC
Unit:inch(mm)
•Guard
Ring for Transient Protection
MECHANICAL DATA
•Case:
ITO-2 20AC Molded Plastic
•Terminals:
Plated Leads Solderable per
MIL-STD-750, Method 2026
•Polarity:
As Marked on Body
•
Weight: 2.24 grams (approx.)
•
Mounting Position: Any
•Marking:
Type Number
Maximum Ratings and Electrical Characteristics @TA=25°C unless otherwise specified
Single Phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic
Symbol
SB
1020F
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Rectified Output Current @TC =
95°C
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave
superimposed on rated load (JEDEC
Method)
Forward Voltage @IF = 10 A
Peak Reverse Current @TA = 25°C
At Rated DC Blocking Voltage @TA = 100°C
Typical Junction Capacitance (Note 1)
Operating and Storage Temperature Range
C
j
T
j
, T
STG
V
F
I
RM
0.55
0.5mA
50 mA
700
-55 to +150
0.75
0.85
0.95
0.1 mA
7 mA
mA
pF
℃
Volts
IFSM
150
Amps
V
RRM
V
RWM
V
R
V
R(RMS)
I
F
14
21
28
35
10
42
56
70
105
Volts
Amp
20
30
40
50
60
80
100
150
Volts
SB
1030F
SB
1040F
SB
1050F
SB
1060F
SB
1080F
SB
10100F
SB
10150F
Units
Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C.
http://www.yeashin.com
1
REV.02 20150105
DEVICE CHARACTERISTICS
SB1020F~SB10150F
INSTANTANEOUS FORWARD CURRENT
AMPERES
40
50,60V
20,30,40V
10
8
6
4
2
1.0
.8
.6
.4
.2
.1
80,100V
AVERAGE FORWARD CURRENT
25.0
20.0
15.0
10.0
5.0
0
0
150V
T
J
= 25
O
C
Pulse Width = 300
m
s
1% Duty Cycle
95
CASE TEMPERATURE, C
O
150
.4
.5
.6
.7
.8
.9
1.0
1.1
INSTANTANEOUS FORWARD VOLTAGE, VOLTS
Fig.1- FORWARD CURRENT DERATING CURVE
INSTANTANEOUS REVERSE CURRENT, MILAMPERES
Fig.2- TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTIC
100
T
C
= 100
O
C
150
PEAK FORWARD SURGE CURRENT,
10
120
110
90
70
50
30
20
10
1
2
5
10
T
C
= 75
O
C
1.0
8.3ms Single
Half Since-Wave
JEDEC Method
T
C
= 25 C
O
0.1
0.01
0
100
200
300
PERCENT OF PEAK REVERSE VOLTAGE
20
50
100
NO. OF CYCLE AT 60HZ
Fig.3- TYPICAL REVERSE CHARACTERISTIC
Fig.4- MAXIMUM NON-REPETITIVE SURGE CURRENT
CAPACITANCE, pF
1000
T
J
= 25
O
C
800
600
400
200
0
1
2
5
10
20
50 100 200
500
REVERSE VOLTAGE, VOLTS
Fig.5- TYPICAL JUNCTION CAPACITANCE
http://www.yeashin.com
2
REV.02 20150105
Microcontroller MCU
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