SMD Type
Schottky Diodes
SS320F ~ SS3200F
SMAF
Diodes
■
Features
●
Low power loss, high efficiency
●
High forward surge current capability
●
Reverse Voltage - 20 to 200 V
●
Forward Current - 3A
1
2
1 Cathode
2 Anode
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS voltage
Maximum DC Blocking Voltage
Forward Voltage @ I
F
=3A
Averaged Forward Current.
Peak Forward Surge Current
Ta=25℃
Maximum DC Reverse Current Ta=100℃
Ta=125℃
Junction Temperature
Storage Temperature
Tj
Tstg
I
R
Symbol
V
RRM
V
RMS
V
DC
V
F
I
FAV
I
FSM
0.5
5
-
125
-55 to 150
80
0.3
-
5
℃
mA
SS
320F
20
14
20
SS
SS
SS
340F 340AF 360F
40
28
40
0.55
45
31.5
45
60
42
60
0.7
3
70
SS
SS
SS
SS
SS
380F 3100F 3120F 3150F 3200F
80
56
80
100
70
100
0.85
120
84
120
150
105
150
200
140
200
V
Unit
0.95
A
■
Marking
NO.
Marking
SS320F
SS32
SS340F
SS34
SS340AF
SS34A
SS360F
SS36
SS380F
SS38
SS3100F
SS310
SS3120F
SS312
SS3150F
SS315
SS3200F
SS320
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1
SMD Type
Schottky Diodes
SS320F ~ SS3200F
■
Typical Characterisitics
Fig.1 Forward Current Derating Curve
Instaneous Reverse Current (
μA)
3.0
100L F M
Diodes
Fig.2 Typical Reverse Characteristics
10
4
T
J
=100
°
C
Average Forward Current (A)
2.5
2.0
1.5
1.0
0.5
0.0
Single phase half-wave 60 Hz
resistive or inductive load
10
3
10
2
T
J
=75
°
C
SS320 F/SS340AF
10
1
SS360 F-SS3200F
T
J
=25
°
C
25
50
75
100
125
150
10
0
0
20
40
60
80
100
Ambient Temperature (°
C)
Percent of Rated Peak Reverse Voltage（%）
Fig.3 Typical Forward Characteristic
Instaneous Forward Current (A)
Peak Forward Surage Current (A)
80
70
60
50
40
30
20
Fig.5 Maximum Non-Repetitive Peak
Forward Surage Current
8.3 ms Single Half Sine Wave
(JEDEC Method)
20
10
1.0
SS320F/SS340F
SS340AF/SS380F
SS3100F/SS3120F
SS3150F/SS3200F
SS320F-SS380F
SS3100F-SS3200F
0.1
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
1
10
100
Instaneous Forward Voltage (V)
Number of Cycles at 60Hz
2
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Test/Measurement
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