SMD Type
Ultra Fast Recovery Diodes
US1AF ~ US1MF
SOD-123F
Diodes
Unit:mm
Cathode Band
Top View
1.85 ± 0.1
●
Glass Passivated Chip
●
Low Forward Voltage Drop And High Current Capability
2.8 ± 0.1
1.20 ~ 1.35
●
Epoxy meets UL 94 V-0 flammability rating
●
Ultra Fast Switching For High Efficiency
0.65 ± 0.1
3.7 ± 0.1
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Averaged Forward Current.T
L
=110℃
Peak Forward Surge Current @ 8.3ms
Thermal Resistance Junction to Ambient
Junction Temperature
Operating Temperature
Storage Temperature
Symbol
V
RRM
V
RMS
V
DC
I
FAV
I
FSM
R
θJA
Tj
T
OP
Tstg
US
1AF
50
35
50
US
1BF
100
70
100
US
1CF
150
105
150
US
1DF
200
140
200
1
30
30
150
-65 to 175
-65 to 175
℃
US
1GF
400
280
400
US
1JF
600
420
600
US
1KF
800
560
800
US
1MF
1000
700
1000
A
℃/W
V
Unit
■
Electrical Characteristics Ta = 25℃
Parameter
US1AF-1DF
Forward voltage
US1GF
US1JF-1MF
Reverse voltage leakage current
US1AF-US1GF
Reverse Recovery Time
US1JF~US1KF
US1MF
Typical Junction Capacitance
US1AF-1GF
US1JF-1MF
C
J
V
R
=4V, f=1MHz
T
rr
I
F
=0.5A, I
R
=1A, I
rr
=0.25A
I
R
Ta = 25℃
Ta = 100℃
V
F
I
FM
=1A, T
J
= 25°C
Symbol
Test Conditions
Min
Typ
Max
1
1.4
1.7
10
100
50
75
100
20
17
pF
ns
uA
V
Unit
■
Marking
NO.
Marking
US1AF
US1A
US1BF
US1B
US1CF
US1C
US1DF
US1D
US1GF
US1G
US1JF
US1J
US1KF
US1K
US1MF
US1M
0.20
●
Low Reverse Leakage Current
0.8± 0.1
■
Features
www.kexin.com.cn
1
SMD Type
Ultra Fast Recovery Diodes
US1AF ~ US1MF
■
Typical Characterisitics
Figure 1
Typical Forward Characteristics
20
10
6
4
2.4
2.2
2.0
1.8
Diodes
Figure 2
Forward Derating Curve
2
Amps
US1AF -1DF
US1GF
1
.6
.4
.2
.1
.06
.04
.02
.01
.8
1.0
1.2
Volts
1.4
US1JF -1MF
1.6
1.4
Amps
1.2
1.0
.8
.6
C
T
J
=25°
.4
Single Phase, Half Wave
.2 60Hz Resistive or Inductive Load
0
0
30
60
90
°
C
Average Forward Rectified Current - Amperes
versus
Lead Temperature -°
C
120
150
180
1.6
1.8
Instantaneous Forward Current - Amperesversus
Instantaneous Forward Voltage - Volts
Figure 3
Junction Capacitance
100
60
40
20
pF
10
6
US1JF
-1MF
US1AF -1GF
T
J
=25°
C
4
2
1
.1
.2
.4
1
Volts
2
4
10
20
40
100
200
400
1000
Junction Capacitance - pFversus
Reverse Voltage - Volts
2
www.kexin.com.cn
SMD Type
Ultra Fast Recovery Diodes
US1AF ~ US1MF
■
Typical Characterisitics
Figure 4
Peak Forward Surge Current
Figure 5
Peak Forward Surge Current
Diodes
30
25
20
15
Amps
10
5
0
Amps
1000
600
400
200
100
60
40
20
1
2
4
6
8 10
Cycles
20
40
60 80 100
10
.01
.02
.06 .1
.2
mS
.6
1
2
6
10
Peak Forward Surge Current - Amperesversus
Number Of Cycles At 60Hz - Cycles
Figure
6
Reverse Recovery Time Characteristic And Test Circuit Diagram
50Ω
10Ω
Peak Forward Surge Current - Amperes versus
Pulse Duration - Milliseconds (mS)
+0.5A
0
t
rr
25Vdc
Pulse
Generator
Note 2
1Ω
Oscilloscope
Note 1
-0.25
-1.0
Notes:
1. Rise Time = 7ns max.
Input impedance = 1 megohm, 22pF
2. Rise Time = 10ns max.
Source impedance = 50 ohms
3. Resistors are non-inductive
1cm
Set Time Base for 20/100ns/cm
www.kexin.com.cn
3
京公网安备 11010802033920号
EEWORLD
