BCP5551
Elektronische Bauelemente
RoHS Compliant Product
NPN Epitaxial
Planar Transistor
SOT-89
Features
Designed for gereral prupose application requiring
high breakdown voltage.
1
2
3
1.BASE
2.COLLECTOR
3.EMITTER
REF.
Marking: 5551
XXXX
(xxxx = Date Code)
A
B
C
D
E
F
Min.
4.4
4.05
1.50
1.30
2.40
0.89
Max.
4.6
4.25
1.70
1.50
2.60
1.20
REF.
G
H
I
J
K
L
M
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
ABSOLUTE MAXIMUM RATINGS (Tamb=25
o
C, unless otherwise specified)
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Operating Junction and Storage Temperature
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
D
T
J
,T
STG
180
160
6
600
1.2
-55 ~ +150
Value
Unit
V
V
V
mA
W
o
C
ELECTRICAL CHARACTERISTICS (Tamb=25
o
C)
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Emitter Cut-off Current
Collector-Emitter Saturation Voltage
Output Capacitance
Base-Emitter Voltage
DC Current Gain
Transition Frequency
Parameter
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE(sat)
1
V
CE(sat)
2
C
ob
V
BE(sat)1
V
BE(sat)2
h
FE1
h
FE2
h
FE3
f
T
Min.
180
160
6
-
-
-
-
-
-
-
80
80
30
100
Typ. Max.
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
50
50
150
200
6
1
1
-
250
-
300
Unit
V
V
V
nA
nA
mV
mV
pF
V
V
MHz
I
C
= 100µA
I
C
= 1mA
I
E
= 10µA
V
CB
= 120V
V
EB
= 4V
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CB
= 10V, f=1MHz
I
C
= 10mA, I
B
= 1mA
I
C
= 50mA, I
B
= 5mA
V
CE
= 5V, I
C
= 1mA
V
CE
= 5V, I
C
= 10mA
V
CE
= 5V, I
C
= 50mA
V
CE
= 10V,I
C
= 10mA, f=100MHz
Test Conditions
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
MCU
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