BCP882
Elektronische Bauelemente
RoHS Compliant Product
NPN Silicon
Epitaxial Planar Transistor
SOT-89
Description
The
BCP882 is suited for the output stage of 1.5W
audio, voltage regulator, and relay driver.
REF.
A
B
C
D
E
F
Millimeter
Min.
Max.
4.4
4.6
4.05
4.25
1.50
1.70
1.30
1.50
2.40
2.60
0.89
1.20
REF.
G
H
I
J
K
L
M
Millimeter
Min.
Max.
3.00 REF.
1.50 REF.
0.40
0.52
1.40
1.60
0.35
0.41
5 q TYP.
0.70 REF.
Absolute Maximum Ratings at T
A
=25 C
Symbol
V
CBO
V
CEO
V
EBO
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Total Power Dissipation
Junction and Storage Temperature
o
o
Parameter
Value
40
30
5
3
1.2
-55~+150
Units
V
V
V
A
W
O
I
C
P
D
T
J,
T
stg
C
ELECTRICAL CHARACTERISTICS Tamb=25
C
unless otherwise specified
Parameter
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector Saturation Voltage
Base-Emitter Saturation Voltage
DC Current Gain
Gain-Bandwidth Product
Output Capacitance
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
V
CE
(sat)
V
BE
(sat)
h
FE1
h
FE2
fT
C
ob
Min
40
30
5
-
-
-
-
30
100
-
-
Typ.
-
-
-
-
-
-
-
-
-
90
45
Max
-
-
-
Unit
V
V
V
uA
uA
V
V
Test Conditions
I
C
=100
µA,I
E
=0
I
C
= 1mA,I
B
=0
I
E
= 10µA
V
CB
= 30V
V
EB
=3V
I
C
=2A,I
B
=0.2A
I
C
=2A,I
B
=0.2A
V
CE
= 2 V, I
C
=20mA
V
CE
= 2 V, I
C
=1 A
V
CE
= 5 V, I
C
= 0.1A,f=100MHz
V
CB
=10V , f=1MHz,I
E
=0
1
1
0.5
2
-
500
-
-
MH z
pF
Classification of hFE
Rank
Range
http://www.SeCoSGmbH.com
Q
100~200
P
160~320
E
250~500
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 1 of 2
BCP882
Elektronische Bauelemente
NPN Silicon
Epitaxial Planar Transistor
Characteristics Curve
http://www.SeCoSGmbH.com
Any changing of specification will not be informed individual
01-Jun-2002 Rev. A
Page 2 of 2
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