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DAP222

Description
0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE
Categorysemiconductor    Discrete semiconductor   
File Size284KB,1 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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0.1 A, 80 V, 2 ELEMENT, SILICON, SIGNAL DIODE

SMD Type
Switching Diodes
DAP222
(KAP222)
SOT-523
1.6
+0.
1
-0.
1
Diodes
U n it: m m
High speed
Suitable for high packing density layout
High reliability
2
1
1.
-0.15
6
+0.15
0.55 (REF.)
Features
+0.1
1.0
-0.1
+0.05
0.2
-0.05
0.15±0.05
3
0.3±0.05
+0.1
0.5
-0.1
0.
-0.05
75
+0.05
3
2
Absolute Maximum Ratings Ta = 25℃
Parameter
Peak Reverse Voltage
DC Reverse Voltage
Average forward current
Peak Forward Surge Current
Power Dissipation
Junction Temperature
Storage Temperature range
Symbol
V
RM
V
R
I
O
I
FM
P
d
T
J
T
stg
Rating
80
80
100
300
150
150
-55 to 150
Unit
V
mA
mW
Electrical Characteristics Ta = 25℃
Parameter
Reverse breakdown voltage
Forward voltage
Reverse voltage leakage current
Junction capacitance
Reverse recovery time
Symbol
V
R
V
F
I
R
C
j
t
rr
Test Conditions
I
R
= 100 uA
I
F
= 100mA
V
R
= 70 V
V
R
= 6 V, f= 1 MHz
I
F
=I
R
=5mA , V
R
=6V
Min
80
1.2
0.1
3.5
4
Typ
Max
Unit
V
uA
pF
ns
Marking
Marking
P
0.
-0.11
8
+0.
1
0.
36±0.1
0.
8±0.1
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