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1N5407

Description
3 A, SILICON, RECTIFIER DIODE, DO-201AD
Categorysemiconductor    Discrete semiconductor   
File Size827KB,2 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
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1N5407 Overview

3 A, SILICON, RECTIFIER DIODE, DO-201AD

DIP Type
Rectifier Diodes
1N5400 ~ 1N5408
DO-27
Diodes
Features
Low coat construction
Low forward voltage drop
Low reverse leakage
High forward surge current capability
0.220 (5.6)
0.197(5.0)
DIA.
1.0 (25.4)
MIN.
0.375(9.5)
0.285(7.2)
1.0 (25.4)
MIN.
0.052 (1.3)
0.048 (1.2)
DIA.
Dimensions in inches and (millimeters)
Absolute Maximum Ratings Ta = 25℃
Parameter
Repetitive Peak Reverse Voltage
RMS Voltage
Maximum DC Blocking Voltage
Forward Voltage @ 3A
Averaged Forward Current.Ta=75℃
Peak Forward Surge Current @ 8.3ms
Maximum DC Reverse Current Ta=25℃
Ta=150℃
Maximum Full Load Reverse Current ,full Cycle
Average 0.375" Lead Length @T
L
=75℃
Typical Junction Capacitance
Typical thermal resistance
Junction Temperature
Storage Temperature
(Note.1)
Symbol
V
RRM
V
RMS
V
DC
V
F
I
FAV
I
FSM
I
R
1N
5400
50
35
50
1N
5401
100
70
100
1N
5402
200
140
200
1N
5404
400
280
400
1.2
3
125
5
500
500
40
30
150
-55 to 150
pF
℃/W
μA
A
1N
5406
600
420
600
1N
5407
800
560
800
1N
5408
1000
700
1000
V
Unit
I
R(AV)
C
J
R
θJA
Tj
Tstg
Note.1: Measured at 1MHz and applied reverse voltage of 4V D.C
www.kexin.com.cn
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1N5407 1N5400 1N5401 1N5402 1N5404 1N5408
Description 3 A, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 50 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 100 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 200 V, SILICON, RECTIFIER DIODE, DO-201AD 3 A, 400 V, SILICON, RECTIFIER DIODE, DO-201AD RECTIFIER DIODE,1KV V(RRM),DO-204AE
Number of terminals - 2 2 2 2 -
Number of components - 1 1 1 1 -
Processing package description - PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 PLASTIC PACKAGE-2 GREEN, PLASTIC PACKAGE-2 -
state - ACTIVE ACTIVE DISCONTINUED ACTIVE CONSULT MFR
packaging shape - round round round round -
Package Size - LONG FORM LONG FORM LONG FORM LONG FORM -
Terminal form - Wire Wire Wire Wire -
terminal coating - MATTE Tin tin tin lead PURE Tin -
Terminal location - AXIAL AXIAL AXIAL AXIAL -
Packaging Materials - Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy Plastic/Epoxy -
structure - single single single single -
Shell connection - isolation isolation isolation isolation -
Diode component materials - silicon silicon silicon silicon -
Diode type - rectifier diode rectifier diode rectifier diode rectifier diode rectifier diode
application - GENERAL PURPOSE GENERAL PURPOSE GENERAL PURPOSE EFFICIENCY -
Phase - 1 1 1 1 -
Maximum repetitive peak reverse voltage - 50 V 100 V 200 V 400 V -
Maximum average forward current - 3 A 3 A 3 A 3 A -
Maximum non-repetitive peak forward current - 200 A 200 A 200 A 200 A -
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