ASL5463
ASL5463 Data Sheet
High Gain, Low Noise Amplifier
1. Product Overview
1.1
General Description
ASL5463 is a low noise amplifier with high linearity over a wide range of frequency up to 1.7 ~ 4.0 GHz
with S11 & S22 < -10 dB. It is also suitable for use in the mobile wireless systems such as PCS, WCDMA,
LTE, WiBro, WiMAX, WLAN and so on. It has an active bias circuit for stable current over temperature
and process variation. The amplifier is available in SOT363 package and passes the stringent DC, RF
and reliability tests.
1.2
Features
17.0 dB Gain at 2000 MHz
20.0 dBm P1dB at 2000 MHz
37.0 dBm Output IP3 at 2000 MHz
0.75 dB NF at 2000 MHz
Current adjustable with R1 (in application circuit 3.1)
MTTF > 100 Years
Single Supply: +3 ~ +5 V
1.3
Applications
Low Noise Amplifier for PCS, WCDMA, WLAN, and WiMAX
Other Low Noise Application
1.4
Package Profile & RoHS Compliance
SOT363, 2.1x2.0 mm
2
, surface mount
RoHS-compliant
1/10
ASB Inc.
sales@asb.co.kr
June 2014
ASL5463
2. Summary on Product Performances
2.1
Typical Performance
Unit
1800
0.70
17.8
-17.0
-10.0
34.0
20.0
2000
0.75
17.0
-15.0
-11.0
37.0
20.0
2500
0.95
14.9
-14.0
-11.0
38.0
20.0
MHz
dB
dB
dB
dB
dBm
dBm
mA
V
Supply voltage = +5 V, T
A
= +25
C,
Z
O
= 50
Parameter
Typical
Frequency
Noise Figure
Gain
S11
S22
Output IP3
1)
Output P1dB
Current
Device Voltage
1500
0.65
19.4
-17.0
-10.0
32.0
20.0
45
+5
1700
0.65
18.3
-18.0
-10.0
33.0
20.0
1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz.
2.2
Product Specification
Min
Typ
2000
0.75
17.0
-15.0
-11.0
37.0
20.0
45
+5
Max
Unit
MHz
dB
dB
dB
dB
dBm
dBm
mA
V
Supply voltage = +5 V, T
A
= +25
C,
Z
O
= 50
Parameter
Frequency
Noise Figure
Gain
S11
S22
Output IP3
Output P1dB
Current
Device Voltage
2.3
Pin
1
2, 4, 5
3
6
Pin Configuration
Description
Bias
Ground
RF_IN
RF_OUT & Bias
Simplified Outline
1
2
3
6
5
4
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ASB Inc.
sales@asb.co.kr
June 2014
ASL5463
2.4
Absolute Maximum Ratings
Max. Ratings
-40 to
85 C
-40 to
150 C
+6 V
+150
C
+25 dBm
Parameters
Operation Case Temperature
Storage Temperature
Device Voltage
Operation Junction Temperature
Input RF Power (CW, 50
matched)
2.5
Symbol
R
th
Thermal Resistance
Description
Thermal resistance from junction to lead
Typ
110
Unit
C/W
2.6
HBM
MM
ESD Classification & Moisture Sensitivity Level
ESD Classification
Class 1A
Class A
Voltage Level: 400 V
Voltage Level: 50 V
CAUTION: Gallium Arsenide Integrated Circuits are sensitive to electrostatic discharge (ESD) and can be
damaged by static electricity. Proper ESD control techniques should be used when handling
these devices.
Moisture Sensitivity Level
MSL 3 at 260
C
reflow
(Intentionally Blanked)
3/10
ASB Inc.
sales@asb.co.kr
June 2014
ASL5463
3.2
Performance Table
Supply voltage = +5 V, T
A
= +25
C,
Z
O
= 50
Parameter
Frequency
Noise Figure
Gain
S11
S22
Output IP3
1)
Output P1dB
Current
Device Voltage
Typical
1500
0.65
19.4
-17.0
-10.0
32.0
20.0
45
+5
1700
0.65
18.3
-18.0
-10.0
33.0
20.0
1800
0.70
17.8
-17.0
-10.0
34.0
20.0
2000
0.75
17.0
-15.0
-11.0
37.0
20.0
2500
0.95
14.9
-14.0
-11.0
38.0
20.0
Unit
MHz
dB
dB
dB
dB
dBm
dBm
mA
V
1) OIP3 is measured with two tones at the output power of +4 dBm/tone separated by 1 MHz.
3.3
Plot of S-parameter & Stability Factor
30
20
S21
7
6
5
4
S22
S11
K
S12
S-parameters (dB)
10
0
-10
-20
-30
-40
0
3
2
1
0
500 1000 1500 2000 2500 3000 3500 4000
Frequency (MHz)
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ASB Inc.
sales@asb.co.kr
Stability Factor, K
June 2014
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