Data Sheet
RJF0410JPE
40V - 40A - N Channel Thermal FET
Power Switching
Description
This FET has the over temperature shut-down capability sensing to the junction temperature. This FET has the built-in
over temperature shut-down circuit in the gate area. And this circuit operation to shut-down the gate voltage in case of
high junction temperature like applying over power consumption, over current etc..
R07DS1237EJ0200
Rev.2.00
Jan 29, 2015
Features
•
•
•
•
•
•
•
Logic level operation.
Built-in the over temperature shut-down circuit.
High endurance capability against to the short circuit.
Latch type shut down operation (need 0 voltage recovery).
Built-in the current limitation circuit.
Power supply voltage applies 12 V.
AEC-Q101 Compliant
Outline
RENESAS Package code: PRSS0004AE-B
(Package name: LDPAK (S)-(1) )
4
Current
Limitation
Circuit
Gate
Shut-down
Circuit
1. Gate
2. Drain
3. Source
4. Drain
D
G
1
2
Gate Resistor
Temperature
Sensing
Circuit
3
Latch
Circuit
S
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Drain to source voltage
V
DSS
Gate to source voltage
V
GSS
Gate to source voltage
V
GSS
Drain current
I
D Note3
Body-drain diode reverse drain current
I
DR
Avalanche current
I
AP Note 2
Avalanche energy
E
AR Note 2
Channel dissipation
Pch
Note 1
Channel temperature
Tch
Storage temperature
Tstg
Notes: 1. Value at Tc = 25°C
2. Tch = 25°C, Rg
≥
50
Ω
3. It provides by the current limitation lower bound value.
Ratings
40
16
–2.5
40
40
12
960
100
150
–55 to +150
Unit
V
V
V
A
A
A
mJ
W
°C
°C
R07DS1237EJ0200 Rev.2.00
Jan 29, 2015
Page 1 of 7
RJF0410JPE
Typical Operation Characteristics
(Ta = 25°C)
Item
Input voltage
Input current
(Gate non shut down)
Input current
(Gate shut down)
Shut down temperature
Gate operation voltage
Drain current
(Current limitation value)
Notes: 4. Pulse test
Symbol
V
IH
V
IL
I
IH1
I
IH2
I
IL
I
IH(sd)1
I
IH(sd)2
Tsd
Vop
I
D limt
Min
3.5
—
—
—
—
—
—
—
3.5
40
Typ
—
—
—
—
—
0.8
0.35
175
—
—
Max
—
1.2
100
50
1
—
—
—
12
—
Unit
V
V
μA
μA
μA
mA
mA
°C
V
A
Test Conditions
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Vi = 1.2 V, V
DS
= 0
Vi = 8 V, V
DS
= 0
Vi = 3.5 V, V
DS
= 0
Channel temperature
V
GS
= 5 V, V
DS
= 10 V
Note 4
Electrical Characteristics
(Ta = 25°C)
Item
Drain current
Symbol
I
D1
I
D2
I
D3
V
(BR)DSS
V
(BR)GSS
V
(BR)GSS
I
GSS1
I
GSS2
I
GSS3
I
GSS4
I
GS(OP)1
I
GS(OP)2
I
DSS
V
GS(off)
|y
fs
|
R
DS(on)
R
DS(on)
Coss
t
d(on)
t
r
t
d(off)
t
f
V
DF
t
rr
t
os1
Min
—
—
40
40
16
–2.5
—
—
—
—
—
—
—
1.1
20
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
—
—
—
—
—
—
—
0.8
0.35
—
—
46
11.3
9
1098
24.7
99.3
7.44
13.3
0.9
122
0.63
Max
60
10
—
—
—
—
100
50
1
–100
—
—
10
2.1
—
15
13
—
—
—
—
—
—
—
—
Unit
A
mA
A
V
V
V
μA
μA
μA
μA
mA
mA
μA
V
S
mΩ
mΩ
pF
μs
μs
μs
μs
V
ns
ms
Test Conditions
V
GS
= 3.5 V, V
DS
= 10 V
Note 5
V
GS
= 1.2 V, V
DS
= 10 V
V
GS
= 5 V, V
DS
= 10 V
Note 5
I
D
= 10 mA, V
GS
= 0
I
G
= 800
μA,
V
DS
= 0
I
G
= –100
μA,
V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
GS
= 1.2 V, V
DS
= 0
V
GS
= –2.4 V, V
DS
= 0
V
GS
= 8 V, V
DS
= 0
V
GS
= 3.5 V, V
DS
= 0
V
DS
= 32 V, V
GS
= 0, Tc = 110°C
V
DS
= 10 V, I
D
= 1 mA
I
D
= 20 A, V
DS
= 10 V
Note 5
I
D
= 20 A, V
GS
= 5 V
Note 5
I
D
= 20 A, V
GS
= 10 V
Note 5
V
DS
= 10 V, V
GS
= 0, f = 1MHz
V
GS
= 10 V, I
D
= 20 A, R
L
= 1.5
Ω
Drain to source breakdown
voltage
Gate to source breakdown
voltage
Gate to source leak current
Input current (shut down)
Zero gate voltage drain current
Gate to source cutoff voltage
Forward transfer admittance
Static drain to source on state
resistance
Output capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Body-drain diode forward
voltage
Body-drain diode reverse
recovery time
Over load shut down
operation time
Note 6
I
F
= 40 A, V
GS
= 0
Note 5
I
F
= 40 A, V
GS
= 0
di
F
/dt = 50 A/μs
V
GS
= 5 V, V
DD
= 16 V
Notes: 5. Pulse test
6. Including the junction temperature rise of the over loaded condition.
R07DS1237EJ0200 Rev.2.00
Jan 29, 2015
Page 2 of 7
RJF0410JPE
Main Characteristics
Power vs. Temperature Derating
200
1000
Ta = 25°C
Thermal shut down
operation area
Maximum Safe Operation Area
Channel Dissipation Pch (W)
150
Drain Current I
D
(A)
100
1
m
s
100
10
DC Operation
(Tc = 25°C)
PW = 10 ms
50
1
Operation in this area
is limited by R
DS(on)
0
50
100
150
200
0.1
0.1
1
10
100
Case temperature Tc (°C)
Drain to Source Voltage V
DS
(V)
Typical Output Characteristics
100
10 V
8.0 V
Typical Transfer Characteristics
40
Tc = -40°C
Drain Current I
D
(A)
Drain Current I
D
(A)
80
5.0 V
30
60
4.0 V
20
25°C
10
150°C
V
DS
= 10 V
Pulse Test
2
3
4
5
40
V
GS
= 3.5 V
20
Pulse Test
0
2
4
6
8
10
0
1
Drain to Source Voltage V
DS
(V)
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Drain to Source Saturation Voltage
V
DS(on)
(mV)
Pulse Test
300
Gate to Source Voltage V
GS
(V)
Static Drain to Source State Resistance
vs. Drain Current
Drain Source On Sate Resistance
R
DS(on)
(mΩ)
100
Pulse Test
400
200
I
D
= 20 A
5V
10
V
GS
= 10 V
100
10 A
5A
0
2
4
6
8
10
1
0.1
1
10
100
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
R07DS1237EJ0200 Rev.2.00
Jan 29, 2015
Page 3 of 7
RJF0410JPE
Static Drain to Source on State Resistance
vs. Temperature
Forward Transfer Admittance |yfs| (S)
25
Pulse Test
20
I
D
= 5 A, 10 A
15
V
GS
= 5 V
10
I
D
= 5 A, 10 A, 20 A
5
-50 -25
V
GS
= 10 V
0
25
50
75 100 125 150
20 A
1000
Static Drain to Source on State Resistance
R
DS (on)
(mΩ)
Forward Transfer Admittance vs.
Drain Current
V
DS
= 10 V
Pulse Test
Tc = -40°C
25°C
10
150°C
1
100
0.1
0.1
1
10
100
Case Temperature
Tc (°C)
Drain Current I
D
(A)
Body-Drain Diode Reverse
Recovery Time
Reverse Recovery Time trr (ns)
1000
di / dt = 50 A /
μs
V
GS
= 0, Ta = 25°C
1000
Switching Characteristics
V
GS
= 10 V, V
DD
= 30 V
PW = 300
μs,
duty < 1%
Switching Time t (μs)
tr
100
tf
10
td(on)
100
10
td(off)
1
1
10
100
1
0.1
1
10
100
Reverse Drain Current
I
DR
(A)
Drain Current
I
D
(A)
Reverse Drain Current vs.
Source to Drain Voltage
40
Typical Capacitance vs.
Drain to Source Voltage
10000
V
GS
= 0
f = 1 MHz
Reverse Drain Current I
DR
(A)
30
5V
20
V
GS
= 0 V, -5 V
Capacitance C (pF)
1000
Coss
10
Pulse Test
0
100
0.4
0.8
1.2
1.6
2.0
0
10
20
30
40
Source to Drain Voltage V
SD
(V)
Drain to Source Voltage V
DS
(V)
R07DS1237EJ0200 Rev.2.00
Jan 29, 2015
Page 4 of 7
RJF0410JPE
Gate to Source Voltage vs.
Shutdown Time of Load-Short Test
Shutdown Case Temperature Tc (°C)
V
GS
(V)
16
14
12
10
8
6
4
2
0
0.1
1
10
V
DD
= 16 V
200
Shutdown Case Temperature vs.
Gate to Source Voltage
180
Gate to Source Voltage
160
140
120
100
0
I
D
= 1 A
2
4
6
8
10
Shutdown Time of Load-Short Test PW (μs)
Gate to Source Voltage
V
GS
(V)
Normalized Transient Thermal Impedance vs. Pulse Width
Normalized Transient Thermal Impedance
γ
s (t)
3
Tc = 25°C
1
D=1
0.5
0.3
0.2
0.1
0.1
0.05
0.02
θch-
c(t) =
γ
s (t) ·
θch-
c
θch-
c = 1.25°C/W, Tc = 25°C
PDM
PW
T
D=
0.03
PW
T
0.01
ulse
tp
ho
1s
0.01
10
μ
100
μ
1m
10 m
100 m
1
10
Pulse Width PW (S)
R07DS1237EJ0200 Rev.2.00
Jan 29, 2015
Page 5 of 7
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