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SI2323DS-3

Description
P-Channel Enhancement MOSFET
File Size2MB,5 Pages
ManufacturerKEXIN
Websitehttp://www.kexin.com.cn/html/index.htm
Download Datasheet View All

SI2323DS-3 Overview

P-Channel Enhancement MOSFET

SMD Type
P-Channel Enhancement
MOSFET
SI2323DS
(KI2323DS)
SOT-23-3
MOSFET
Unit: mm
+0.2
2.9
-0.1
+0.1
0.4
-0.1
V
DS (V)
=-20V
I
D
=-4.7A (V
GS
=-4.5V)
R
DS(ON)
39mΩ (V
GS
=-4.5V)
R
DS(ON)
52mΩ (V
GS
=-2.5V)
R
DS(ON)
68mΩ (V
GS
=-1.8V)
G
1
3
S
2
D
+0.2
2.8
-0.1
3
+0.2
1.6
-0.1
1
2
0.55
0.4
Features
0.95
+0.1
-0.1
+0.02
0.15
-0.02
+0.1
-0.2
1.9
+0.2
1.1
-0.1
1. Gate
+0.1
0.68
-0.1
0-0.1
2. Source
3. Drain
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
(T
J
= 150℃) *1
Pulsed Drain Current
Power Dissipation
Ta = 25℃
Ta = 70℃
Thermal Resistance.Junction- to-Ambient t≤5 sec
Steady State
Thermal Resistance.Junction- to-Foot
Junction Temperature
Storage Temperature Range
*1 Surface Mounted on 1” x 1” FR4 Board.
Ta = 25℃
Ta = 70℃
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJF
T
J
T
stg
1.25
0.8
100
166
50
150
-55 to 150
℃/W
-4.7
-3.8
-20
0.75
0.48
W
5 sec
-20
±8
-3.7
-2.9
A
Steady State
Unit
V
www.kexin.com.cn
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