2SD2142_15 datasheet, PDF - EEWORLD Datasheet

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2SD2142_15: DescriptionNPN Plastic-Encapsulate Transistor; File Size330KB，2 Pages; ManufacturerSECOS; Websitehttp://www.secosgmbh.com/

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2SD2142_15 Overview

NPN Plastic-Encapsulate Transistor

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2SD2142

Elektronische Bauelemente

0.3A , 40V

NPN Plastic-Encapsulate Transistor

RoHS Compliant Product

A suffix of “-C” specifies halogen & lead-free

FEATURE

Darlington connection for a high h

High input impedance.

SOT-23

Top View

C B

MARKING

R1M

PACKAGE INFORMATION

Package

SOT-23

MPQ

LeaderSize

7’ inch

Millimeter

Min.

Max.

2.80

3.04

2.10

2.55

1.20

1.40

0.89

1.15

1.78

2.04

0.30

0.50

Millimeter

Min.

Max.

0.09

0.18

0.45

0.60

0.08

0.177

0.6 REF.

0.89

1.02

REF.

Collector

Base

Emitter

ABSOLUTE MAXIMUM RATINGS

= 25°C unless otherwise specified)

Parameter

Collector to Base Voltage

Collector to Emitter Voltage

Emitter to Base Voltage

Collector Current - Continuous

Collector Power Dissipation

Thermal Resistance From Junction to Ambient

Junction, Storage Temperature

Symbol

CBO

CEO

EBO

θJA

, T

STG

Ratings

300

200

625

150, -55~150

Unit

° /W

ELECTRICAL CHARACTERISTICS

= 25°C unless otherwise specified)

Parameter

Collector to Base Breakdown Voltage

Collector to Emitter Breakdown Voltage

Emitter to Base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector to Emitter Saturation Voltage

Transition Frequency

Collector Output Capacitance

http://www.SeCoSGmbH.com/

Symbol

(BR)CBO

(BR)CEO

(BR)EBO

CBO

EBO

CE(sat)

Min.

5000

Typ.

200

2.5

Max.

0.1

1.4

Unit

µA

MHz

Test Conditions

=100µA, I

=10mA, I

=100µA, I

=30V, I

=12V, I

=3V, I

=100mA

=200mA, I

=0.2mA

=5V, I

=10mA, f=100MHz

=10V, I

=0, f=1MHz

Any changes of specification will not be informed individually.

04-Mar-2011 Rev. B

Page 1 of 2

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