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B772S_15

Description
PNP Plastic-Encapsulated Transistor
File Size347KB,2 Pages
ManufacturerSECOS
Websitehttp://www.secosgmbh.com/
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B772S_15 Overview

PNP Plastic-Encapsulated Transistor

B772S
Elektronische Bauelemente
-3A , -40V
PNP Plastic-Encapsulated Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
FEATURES
Low speed switching.
G
H
TO-92
J
CLASSIFICATION OF h
FE
Product-Rank
Range
B772S-R
60~120
B772S-O
100~200
B772S-Y
160~320
B772S-GR
200~400
K
A
B
D
1
Emitter
2
Collector
3
Base
REF.
A
B
C
D
E
F
G
H
J
K
Millimeter
Min.
Max.
4.40
4.70
4.30
4.70
12.70
-
3.30
3.81
0.36
0.56
0.36
0.51
1.27 TYP.
1.10
-
2.42
2.66
0.36
0.76
E
C
F
Collector
2
3
Base
1
Emitter
ABSOLUTE MAXIMUM RATINGS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Thermal Resistance From Junction to Ambient
Junction, Storage Temperature
Symbol
V
CBO
V
CEO
V
EBO
I
C
P
C
R
θJA
T
J
, T
STG
Rating
-40
-30
-6
-3
625
200
150, -55~150
Unit
V
V
V
A
mW
° /W
C
°
C
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise specified)
Parameter
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
Base to Emitter Voltage
Transition Frequency
Symbol
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
f
T
Min.
-40
-30
-6
-
-
-
60
-
-
50
Typ.
-
-
-
-
-
-
-
-
-
80
Max.
-
-
-
-1
-10
-1
400
-0.5
-1.5
-
Unit
V
V
V
µA
µA
µA
V
V
MHz
Test Conditions
I
C
= -100µA, I
E
=0
I
C
= -10mA, I
B
=0
I
E
= -100µA, I
C
=0
V
CB
= -40V, I
E
=0
V
CE
= -30V, I
B
=0
V
EB
= -6V, I
C
=0
V
CE
= -2V, I
C
= -1A
I
C
= -2A, I
B
= -200mA
V
CE
= -2V, I
C
= -200mA
V
CE
= -5V, I
C
= -100mA, f=10MHz
http://www.SeCoSGmbH.com/
Any changes of specification will not be informed individually.
04-Mar-2011 Rev. B
Page 1 of 2

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