Preliminary
Datasheet
RJH1CV6DPQ-E0
1200V - 30A - IGBT
Application: Inverter
Features
•
Short circuit withstand time (5
μs
typ.)
•
Low collector to emitter saturation voltage
V
CE(sat)
= 1.8 V typ. (at I
C
= 30 A, V
GE
= 15 V, Ta = 25°C)
•
Built-in fast recovery diode (t
rr
= 180 ns typ.) in one package
•
Trench gate and thin wafer technology
•
High speed switching
t
f
= 120 ns typ. (at V
CC
= 600 V, V
GE
= 15 V, I
C
= 30 A, Rg = 5
Ω,
Ta = 25°C, inductive load)
R07DS0524EJ0800
Rev.8.00
Nov 05, 2014
Outline
RENESAS Package code: PRSS0003ZE-A
(Package name: TO-247)
C
4
G
1. Gate
2. Collector
3. Emitter
4. Collector
E
1 2
3
Absolute Maximum Ratings
(Ta = 25°C)
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector to emitter diode forward current
Collector to emitter diode forward peak current
Collector dissipation
Junction to case thermal resistance (IGBT)
Junction to case thermal resistance (Diode)
Junction temperature
Storage temperature
Notes: 1. PW
≤
10
μs,
duty cycle
≤
1%
2. Value at Tc = 25°C
Symbol
V
CES
/ V
R
V
GES
I
C
I
C
ic(peak)
Note1
I
DF
i
DF
(peak)
Note1
P
C Note2
θj-c
Note2
θj-cd
Note2
Tj
Tstg
Ratings
1200
±30
60
30
90
30
90
290
0.43
0.69
150
–55 to +150
Unit
V
V
A
A
A
A
A
W
°C/W
°C/W
°C
°C
R07DS0524EJ0800 Rev.8.00
Nov 05, 2014
Page 1 of 9
RJH1CV6DPQ-E0
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Zero gate voltage collector current
/ Diode reverse current
Gate to emitter leak current
Gate to emitter cutoff voltage
Collector to emitter saturation voltage
Input capacitance
Output capacitance
Reverse transfer capacitance
Total gate charge
Gate to emitter charge
Gate to collector charge
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
Short circuit withstand time
Symbol
I
CES
/I
R
I
GES
V
GE(off)
V
CE(sat)
V
CE(sat)
Cies
Coes
Cres
Qg
Qge
Qgc
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
total
t
sc
Min
—
—
4.5
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Typ
—
—
—
1.8
2.6
1600
85
43
105
14
55
46
33
125
120
2.3
1.7
4.0
5
Max
100
±1
6.5
2.3
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
Unit
μA
μA
V
V
V
pF
pF
pF
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
μs
Test Conditions
V
CE
= 1200 V, V
GE
= 0
V
GE
= ±30 V, V
CE
= 0
V
CE
= 10 V, I
C
= 1 mA
I
C
= 30 A, V
GE
= 15 V
Note3
I
C
= 60 A, V
GE
= 15 V
Note3
V
CE
= 25 V
V
GE
= 0
f = 1 MHz
V
GE
= 15 V
V
CE
= 300 V
I
C
= 30 A
V
CC
= 600 V
V
GE
= 15 V
I
C
= 30 A
Rg = 5
Ω
Inductive load
V
CC
≤
720 V, V
GE
= 15 V
Tc
≤
125°C
I
F
= 30 A
Note3
I
F
= 30 A
di
F
/dt = 100 A/μs
FRD forward voltage
FRD reverse recovery time
FRD reverse recovery charge
FRD peak reverse recovery current
Notes: 3. Pulse test.
V
F
t
rr
Q
rr
I
rr
—
—
—
—
2.0
180
0.63
9.2
—
—
—
—
V
ns
μC
A
R07DS0524EJ0800 Rev.8.00
Nov 05, 2014
Page 2 of 9
RJH1CV6DPQ-E0
Preliminary
Main Characteristics
Collector Dissipation vs.
Case Temperature
400
80
Maximum DC Collector Current vs.
Case Temperature
Collector Dissipation Pc (W)
300
Collector Current I
C
(A)
0
25
50
75
100 125 150 175
60
200
40
100
20
0
0
0
25
50
75
100 125 150 175
Case Temperature Tc (°C)
Case Temperature Tc (°C)
Maximum Safe Operation Area
1000
100
Turn-off SOA
Collector Current I
C
(A)
100
10
0
µ
s
PW
Collector Current I
C
(A)
=
80
10
µ
s
10
60
1
40
0.1
Tc = 25°C
Single pulse
20
0.01
1
0
10
100
1000
10000
0
400
800
1200
1600
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
Typical Output Characteristics
Tc = 25
°
C
Pulse Test
15 V
Typical Output Characteristics
Tc = 150
°
C
Pulse Test
15 V
12 V
60
80
Collector Current I
C
(A)
60
10 V
40
Collector Current I
C
(A)
12 V
80
40
10 V
20
V
GE
= 8 V
20
V
GE
= 8 V
0
0
1
2
3
4
5
0
0
1
2
3
4
5
Collector to Emitter Voltage V
CE
(V)
Collector to Emitter Voltage V
CE
(V)
R07DS0524EJ0800 Rev.8.00
Nov 05, 2014
Page 3 of 9
RJH1CV6DPQ-E0
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Preliminary
Collector to Emitter Satularion Voltage vs.
Gate to Emitter Voltage (Typical)
5
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
4
Collector to Emitter Satularion Voltage
V
CE(sat)
(V)
4
I
C
= 60 A
3
30 A
2
Tc = 150
°
C
Pulse Test
1
8
10
12
14
16
18
20
3
I
C
= 60 A
30 A
Tc = 25
°
C
Pulse Test
2
1
8
10
12
14
16
18
20
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Voltage V
GE
(V)
Collector to Emitter Saturation Voltage
vs. Case Temparature (Typical)
Typical Transfer Characteristics
Collector to Emitter Saturation Voltage
V
CE(sat)
(V)
4.0
3.5
3.0
2.5
2.0
1.5
1.0
−25
30 A
I
C
= 60 A
Collector Current I
C
(A)
80
Tc= 25
°
C
60
150
°
C
40
20
V
CE
= 10 V
Pulse Test
0
0
4
8
12
16
20
V
GE
= 15 V
Pulse Test
0
25
50
75
100 125 150
Gate to Emitter Voltage V
GE
(V)
Gate to Emitter Cutoff Voltage
vs. Case Temparature (Typical)
10
25
Case Temparature Tc (
°
C)
Gate to Emitter Cutoff Voltage V
GE(off)
(V)
Frequency Characteristics (Typical)
Collector Current I
C(RMS)
(A)
8
I
C
= 10 mA
20
0
Collector current wave
(Square wave)
6
15
Tj = 125°C
Tc = 90°C
V
CE
= 400 V
V
GE
= 15 V
Rg = 5
Ω
duty = 50%
10
100
1000
4
1 mA
10
2
V
CE
= 10 V
Pulse Test
0
−25
0
25
50
75
100 125 150
5
0
1
Case Temparature Tc (
°
C)
Frequency f (kHz)
R07DS0524EJ0800 Rev.8.00
Nov 05, 2014
Page 4 of 9
RJH1CV6DPQ-E0
Switching Characteristics (Typical) (1)
Preliminary
Switching Characteristics (Typical) (2)
Swithing Energy Losses E (mJ)
1000
100
V
CC
= 600 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
10
Eon
Switching Times t (ns)
tf
100
td(off)
td(on)
tr
10
1
Eoff
1
1
V
CC
= 600 V, V
GE
= 15 V
Rg = 5
Ω,
Tc = 150
°
C
10
100
0.1
1
10
100
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (3)
Collector Current I
C
(A)
(Inductive load)
Switching Characteristics (Typical) (4)
10
Swithing Energy Losses E (mJ)
10000
V
CC
= 600 V, V
GE
= 15 V
I
C
= 30 A, Tc = 150
°
C
Switching Times t (ns)
Eon
Eoff
1000
tf
td(off)
100
td(on)
tr
10
1
10
100
1
0.1
1
V
CC
= 600 V, V
GE
= 15 V
I
C
= 30 A, Tc = 150
°
C
10
100
Gate Registance Rg (Ω)
(Inductive load)
Gate Registance Rg (Ω)
(Inductive load)
Switching Characteristics (Typical) (6)
10
Switching Characteristics (Typical) (5)
1000
V
CC
= 600 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
tf
Swithing Energy Losses E (mJ)
Switching Times t (ns)
Eon
Eoff
1
100
td(off)
td(on)
tr
10
25
50
75
100
125
150
0.1
25
V
CC
= 600 V, V
GE
= 15 V
I
C
= 30 A, Rg = 5
Ω
50
75
100
125
150
Case Temperature Tc (°C)
(Inductive load)
Case Temperature Tc (°C)
(Inductive load)
R07DS0524EJ0800 Rev.8.00
Nov 05, 2014
Page 5 of 9
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