SMD Type
P-Channel
MOSFET
AO3401A
(KO3401A)
SOT-23-3
+0.2
2.9
-0.1
+0.1
0.4
-0.1
MOSFET
Unit: mm
■
Features
+0.2
2.8
-0.1
3
●
I
D
=-4 A (V
GS
=-10V)
●
R
DS(ON)
＜
50mΩ (V
GS
=-10V)
●
R
DS(ON)
＜
60mΩ (V
GS
=-4.5V)
●
R
DS(ON)
＜
85mΩ (V
GS
=-2.5V)
+0.2
1.6
-0.1
●
V
DS (V)
=-30V
1
2
0.55
0.4
0.95
+0.1
-0.1
+0.02
0.15
-0.02
+0.1
-0.2
1.9
+0.2
1.1
-0.1
1. Gate
0-0.1
D
+0.1
0.68
-0.1
2. Source
3. Drain
G
S
■
Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current
Power Dissipation
Thermal Resistance.Junction- to-Ambient
Thermal Resistance.Junction- to-Lead
Junction Temperature
Junction Storage Temperature Range
T
A
=25°C
T
A
=70°C
t
≤
10s
Steady-State
T
A
=25°C
T
A
=70°C
Symbol
V
DS
V
GS
I
D
I
DM
P
D
R
thJA
R
thJL
T
J
T
stg
Rating
-30
±12
-4
-3.2
-27
1.4
0.9
90
125
80
150
-55 to 150
℃
℃/W
W
A
Unit
V
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1
SMD Type
P-Channel
MOSFET
AO3401A
(KO3401A)
■
Electrical Characteristics Ta = 25℃
Parameter
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body leakage current
Gate Threshold Voltage
Symbol
V
DSS
I
DSS
I
GSS
V
GS(th)
Test Conditions
I
D
=-250μA, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
DS
=-30V, V
GS
=0V, T
J
=55℃
V
DS
=0V, V
GS
=±12V
V
DS
=V
GS
I
D
=-250μA
V
GS
=-10V, I
D
=-4A
Static Drain-Source On-Resistance
R
DS(O
n
)
V
GS
=-10V, I
D
=-4A
V
GS
=-4.5V, I
D
=-3.5A
V
GS
=-2.5V, I
D
=-2.5A
On state drain current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate resistance
Total Gate Charge (10V)
Total Gate Charge (4.5V)
Gate Source Charge
Gate Drain Charge
Turn-On DelayTime
Turn-On Rise Time
Turn-Off DelayTime
Turn-Off Fall Time
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Maximum Body-Diode Continuous Current
Diode Forward Voltage
I
D(ON)
g
FS
C
iss
C
oss
C
rss
R
g
Q
g
Q
gs
Q
gd
t
d(on)
t
r
t
d(off)
t
f
t
rr
Q
rr
I
S
V
SD
I
S
=-1A,V
GS
=0V
I
F
=-4A, d
I
/d
t
=100A/μs
V
GS
=-10V, V
DS
=-15V, R
L
=3.75Ω,
R
GEN
=3Ω
V
GS
=-10V, V
DS
=-15V, I
D
=-4A
V
GS
=0V, V
DS
=0V, f=1MHz
4
V
GS
=0V, V
DS
=-15V, f=1MHz
V
GS
=-10V, V
DS
=-5V
V
DS
=-5V, I
D
=-4A
-27
T
J
=125℃
-0.5
Min
-30
MOSFET
Typ
Max
-1
-5
±100
-1.3
50
75
60
85
Unit
V
uA
nA
V
mΩ
A
17
645
80
55
12
14
7
1.5
2.5
6.5
3.5
41
9
11
3.5
-2
-1
nC
A
V
ns
nC
Ω
pF
S
* The static characteristics in Figures 1 to 6 are obtained using <300us pulses, duty cycle 0.5% max.
■
Marking
Marking
X1**
2
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SMD Type
P-Channel
MOSFET
AO3401A
(KO3401A)
■
Typical Characterisitics
25
20
15
-2.5V
10
5
0
0
1
2
3
4
5
-V
DS
(Volts)
Fig 1: On-Region Characteristics
100
Normalized On-Resistance
1.8
1.6
1.4
1.2
1
0.8
0
6
8
10
-I
D
(A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
2
4
0
25
50
75
100
V
GS
=-10V
I
D
=-4A
10V
4.5V
15
20
V
DS
=-5V
MOSFET
-I
D
(A)
-I
D
(A)
10
5
V
GS
=-2.0V
0
0
0.5
125°
C
25°
C
1
1.5
2
2.5
3
-V
GS
(Volts)
Figure 2: Transfer Characteristics
80
R
DS(ON)
(m
Ω
)
V
GS
=-2.5V
60
V
GS
=-4.5V
V
GS
=-4.5V
17
I
D
=-3.5A
5
V
GS
=-2.5V
I
D
=-2.5A
40
V
GS
=-10V
20
125
150
175
Temperature (°
C)
Figure 4: On-Resistance vs. Junction Temperature
150
I
D
=-4A
130
110
I
S
(A)
90
70
50
30
0
2
4
6
8
10
-V
GS
(Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
25°
C
125°
C
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-V
SD
(Volts)
Figure 6: Body-Diode Characteristics
125°
C
25°
C
R
DS(ON)
(m
Ω
)
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SMD Type
P-Channel
MOSFET
AO3401A
(KO3401A)
■
Typical Characterisitics
10
V
DS
=-15V
I
D
=-4A
Capacitance (pF)
1000
MOSFET
8
-V
GS
(Volts)
800
C
iss
6
600
4
400
C
oss
C
rss
0
15
20
25
-V
DS
(Volts)
Figure 8: Capacitance Characteristics
5
10
30
2
200
0
0
10
Q
g
(nC)
Figure 7: Gate-Charge Characteristics
5
15
0
100.0
10000
T
A
=25°
C
10.0
10µs
Power (W)
-I
D
(Amps)
R
DS(ON)
limited
1.0
1000
100µs
1ms
10ms
T
J(Max)
=150°C
T
A
=25°C
10s
DC
10
100
100
0.1
10
0.0
0.01
0.1
1
1
0.00001
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Ambient
-V
DS
(Volts)
.
Figure 9: Maximum Forward Biased Safe
Operating Area
10
Z
θ
JA
Normalized Transient
Thermal Resistance
D=T
on
/T
T
J,PK
=T
A
+P
DM
.Z
θJA
.R
θJA
R
θJA
=125°
C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
P
D
0.01
Single Pulse
T
on
T
100
1000
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance
4
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